Philip E. Hoggan - Publications, H-index & Citations

Philip E. Hoggan

Leiden University

17H指数

117论文数

963被引数

收录论文 10

发表时间

Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

APPLIED SURFACE SCIENCE

IF6.9

2019-11-01

OAAI

Mehdi, H.; Reveret, F.; Bougerol, C.; Robert-Goumet, C.; Hoggan, P. E.; Bideux, L.; Gruzza, B.; Leymarie, J.; Monier, G.

Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?

NANO LETTERS

IF9.1

2019-06-16

PREAI

Hijazi, Hadi; Monier, Guillaume; Gil, Evelyne; Trassoudaine, Agnes; Bougerol, Catherine; Leroux, Christine; Castellucci, Dominique; Robert-Goumet, Christine; Hoggan, Philip E.; Andre, Yamina; Goktas, Nebile Isik; LaPierre, Ray R.; Dubrovskii, Vladimir G.

DFT and experimental FTIR investigations of early stages of (001) and (111)B GaAs surface nitridation

APPLIED SURFACE SCIENCE

IF6.9

2019-01-01

PREAI

Monier, Guillaume; Hoggan, Philip E.; Bideux, Luc; Paget, Daniel; Mehdi, Hussein; Kubsky, Stefan; Dumas, Paul; Robert-Goumet, Christine

Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide 联合角度分辨x射线光电子能谱、密度泛函理论和砷化镓氮化的动力学研究

APPLIED SURFACE SCIENCE

IF6.9

2018-01-01

PREAI

Mehdi, H.; Monier, G.; Hoggan, P. E.; Bideux, L.; Robert-Goumet, C.; Dubrovskii, V. G.

Quantum Monte Carlo Calculations on a Benchmark Molecule-Metal Surface Reaction: H2 + CU(111)

JOURNAL OF CHEMICAL THEORY AND COMPUTATION

IF5.5

2017-06-09

OAAI

Doblhoff-Dier, Katharina; Meyer, Jorg; Hoggan, Philip E.; Kroes, Geert-Jan

Scaling analysis of self-assembled structures and related morphological information in epitaxial growth

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-02-01

PREAI

Blel, Sonia; Hamouda, Ajmi B. H.; Mahjoub, Brahim; Hoggan, Philip; Oujia, Brahim

Diffusion Monte Carlo for Accurate Dissociation Energies of 3d Transition Metal Containing Molecules

JOURNAL OF CHEMICAL THEORY AND COMPUTATION

IF5.5

2016-06-02

OAAI

Doblhoff-Dier, Katharina; Meyer, Jorg; Hoggan, Philip E.; Kroes, Geert-Jan; Wagner, Lucas K.

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2014-05-21

OAAI

Andre, Yamina; Lekhal, Kaddour; Hoggan, Philip; Avit, Geoffrey; Cadiz, Fabian; Rowe, Alistair; Paget, Daniel; Petit, Elodie; Leroux, Christine; Trassoudaine, Agnes; Ramdani, M. Reda; Monier, Guillaume; Colas, David; Ajib, Rabih; Castelluci, Dominique; Gil, Evelyne

Growth instabilities and adsorbed impurities: A case study

PHYSICAL REVIEW B

IF3.7

2008-06-23

PREAI

Ben-Hamouda, A.; Absi, N.; Hoggan, P. E.; Pimpinelli, A.

Efficient and rapid evaluation of three-center two electron Coulomb and hybrid integrals using nonlinear transformations

JOURNAL OF COMPUTATIONAL PHYSICS

IF3.8

1999-11-01

PREAI

Safouhi, H; Hoggan, PE

研究方向