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J

John S. Suehle

national institute of standards & technology (nist) - usa

43H指数
266论文数
5.6K被引数
收录论文 18
发表时间
The use of a double mask system to prevent Ti diffusion from a Ti/Pt/Au ohmic contact on diamond
err2019-12-06
err14
PREAI
errWaytena, GL; Hoff, HA; Ma, DI; Isaacson, IP; Rebbert, ML; Marrian, C; Suehle, JS
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Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications
err2015-12-04
err69
PREAI
errZhu, Hao; Pookpanratana, Sujitra J.; Bonevich, John Y.; Natoli, Sean N.; Hacker, Christina A.; Ren, Tong; Suehle, John S.; Richter, Curt A.; Li, Qiliang
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Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface
err2012-12-20
err68
errOAAI
errXu, Kun; Zeng, Caifu; Zhang, Qin; Yan, Rusen; Ye, Peide; Wang, Kang; Seabaugh, Alan C.; Xing, Huili Grace; Suehle, John S.; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V.
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On the U-shaped continuum of band edge states at the Si/SiO2 interface
err2011-12-01
err15
PREAI
errRyan, J. T.; Southwick, R. G.; Campbell, J. P.; Cheung, K. P.; Young, C. D.; Suehle, J. S.
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Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
err2011-06-06
err20
PREAI
errRyan, J. T.; Yu, L. C.; Han, J. H.; Kopanski, J. J.; Cheung, K. P.; Zhang, F.; Wang, C.; Campbell, J. P.; Suehle, J. S.
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Band offsets of Al2O3/InxGa1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing
err2010-02-02
err36
PREAI
errNguyen, N. V.; Xu, M.; Kirillov, O. A.; Ye, P. D.; Wang, C.; Cheung, K.; Suehle, J. S.
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Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
err2008-08-27
err77
PREAI
errNguyen, N. V.; Kirillov, Oleg A.; Jiang, W.; Wang, Wenyong; Suehle, John S.; Ye, P. D.; Xuan, Y.; Goel, N.; Choi, K. -W.; Tsai, Wilman; Sayan, S.
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Negative-bias temperature instability induced electron trapping
err2008-07-23
err5
PREAI
errCampbell, J. P.; Cheung, K. P.; Suehle, J. S.; Oates, A.
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Internal photoemission spectroscopy of [TaN/TaSiN] and [TaN/TaCN] metal stacks on SiO2 and [HfO2/SiO2] dielectric stack
err2008-03-06
err9
PREAI
errNguyen, N. V.; Xiong, H. D.; Suehle, J. S.; Kirillov, O. A.; Vogel, E. M.; Majhi, P.; Wen, H. -C.
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Random telegraph signals in n-type ZnO nanowire field effect transistors at low temperature
err2007-07-30
err38
PREAI
errXiong, Hao D.; Wang, Wenyong; Li, Qiliang; Richter, Curt A.; Suehle, John S.; Hong, Woong-Ki; Lee, Takhee; Fleetwood, Daniel M.
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Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO2 for the advanced gate stack
err2006-10-04
err21
PREAI
errChang, K. -S.; Green, M. L.; Suehle, J.; Vogel, E. M.; Xiong, H.; Hattrick-Simpers, J.; Takeuchi, I.; Famodu, O.; Ohmori, K.; Ahmet, P.; Chikyow, T.; Majhi, P.; Lee, B. -H.; Gardner, M.
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A Monolithic CMOS Microhotplate-Based Gas Sensor System
err2002-12-01
err154
PREAI
errAfridi, Muhammad Y.; Suehle, John S.; Zaghloul, Mona E.; Berning, David W.; Hefner, Allen R.; Cavicchi, Richard E.; Semancik, Steve; Montgomery, Christopher B.; Taylor, Charles J.
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Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation
err2002-02-18
err44
PREAI
errSuehle, JS; Vogel, EM; Roitman, P; Conley, JF; Johnston, AH; Wang, B; Bernstein, JB; Weintraub, CE
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Micromachined convective accelerometers in standard integrated circuits technology
err2000-01-24
err65
PREAI
errMilanovic, V; Bowen, E; Zaghloul, ME; Tea, NH; Suehle, JS; Payne, B; Gaitan, M
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The effects of oxidation temperature on the capacitance-voltage characteristics of oxidized AlN films on Si
err1997-12-29
err27
PREAI
errKolodzey, J; Chowdhury, EA; Qui, G; Olowolafe, J; Swann, CP; Unruh, KM; Suehle, J; Wilson, RG; Zavada, JM
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