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Judy L. Hoyt

masdar institute of science & technology

42H指数
242论文数
7.0K被引数
收录论文 16
发表时间
Thin-film Si1-xGex HIT solar cells (vol 103, pg 154, 2014)
err2017-09-01
err0
PREAI
errHadi, Sabina Abdul; Hashemi, Pouya; DiLello, Nicole; Polyzoeva, Evelina; Nayfeh, Ammar; Hoyt, Judy L.
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Thin-film Si1-xGex HIT solar cells
err2014-05-01
err37
PREAI
errHadi, Sabina Abdul; Hashemi, Pouya; DiLello, Nicole; Polyzoeva, Evelina; Nayfeh, Ammar; Hoyt, Judy L.
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Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
err2012-05-09
err42
errOAAI
errTeherani, James T.; Chern, Winston; Antoniadis, Dimitri A.; Hoyt, Judy L.; Ruiz, Liliana; Poweleit, Christian D.; Menendez, Jose
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Photonic ADC: overcoming the bottleneck of electronic jitter
err2012-02-08
err449
errOAAI
errKhilo, Anatol; Spector, Steven J.; Grein, Matthew E.; Nejadmalayeri, Amir H.; Holzwarth, Charles W.; Sander, Michelle Y.; Dahlem, Marcus S.; Peng, Michael Y.; Geis, Michael W.; DiLello, Nicole A.; Yoon, Jung U.; Motamedi, Ali; Orcutt, Jason S.; Wang, Jade P.; Sorace-Agaskar, Cheryl M.; Popovic, Milos A.; Sun, Jie; Zhou, Gui-Rong; Byun, Hyunil; Chen, Jian; Hoyt, Judy L.; Smith, Henry I.; Ram, Rajeev J.; Perrott, Michael; Lyszczarz, Theodore M.; Ippen, Erich P.; Kaertner, Franz X.
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Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors
err2010-02-11
err17
PREAI
errHashemi, Pouya; Kim, Meekyung; Hennessy, John; Gomez, Leonardo; Antoniadis, Dimitri A.; Hoyt, Judy L.
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Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/strained-Si heterostructures on insulator
err2007-08-22
err29
PREAI
errHashemi, Pouya; Gomez, Leonardo; Hoyt, Judy L.; Robertson, Michael D.; Canonico, Michael
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Strain relaxation in patterned strained silicon directly on insulator structures
err2005-12-15
err49
PREAI
errLei, RZ; Tsai, W; Aberg, I; O'Reilly, TB; Hoyt, JL; Antoniadis, DA; Smith, HI; Paul, AJ; Green, ML; Li, J; Hull, R
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Effect of thermal processing on mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x
err2004-04-26
err29
PREAI
errJung, JW; Yu, SF; Olubuyide, OO; Hoyt, JL; Antoniadis, DA; Lee, ML; Fitzgerald, EA
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On the mechanism of ion-implanted As diffusion in relaxed SiGe
err2004-03-01
err10
PREAI
errEguchi, S; Lee, JJ; Rhee, SJ; Kwong, DL; Lee, ML; Fitzgerald, EA; Åberg, I; Hoyt, JL
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Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers
err2003-08-04
err37
PREAI
errDrake, TS; Chléirigh, CN; Lee, ML; Pitera, AJ; Fitzgerald, EA; Antoniadis, DA; Anjum, DH; Li, J; Hull, R; Klymko, N; Hoyt, JL
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