未登录Growth Mechanisms and Electronic Properties of Vertically Aligned MoS2
Stern, Chen; Grinvald, Shmuel; Kirshner, Moshe; Sinai, Ofer; Oksman, Mark; Alon, Hadas; Meiron, Oren E.; Bar-Sadan, Maya; Houben, Lothar; Naveh, Doron
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收藏Knocking Down Highly-Ordered Large-Scale Nanowire Arrays击倒高度有序的大规模纳米线阵列
Pevzner, Alexander; Engel, Yoni; Elnathan, Roey; Ducobni, Tamir; Ben-Ishai, Moshit; Reddy, Koteeswara; Shpaisman, Nava; Tsukernik, Alexander; Oksman, Mark; Patolsky, Fernando
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收藏SiO2/Si3N4/Al2O3 stacks for scaled-down memory devices:: Effects of interfaces and thermal annealing
Lisiansky, M.; Heiman, A.; Kovler, M.; Fenigstein, A.; Roizin, Y.; Levin, I.; Gladkikh, A.; Oksman, M.; Edrei, R.; Hoffman, A.; Shnieder, Y.; Claasen, T.
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