F. J. Rueß - Publications, H-index & Citations

F. J. Rueß

international business machines (ibm)

14H指数

43论文数

1.9K被引数

收录论文 10

发表时间

Confinement and integration of magnetic impurities in silicon

APPLIED PHYSICS LETTERS

IF3.6

2013-02-25

OAAI

Ruess, Frank J.; El Kazzi, Mario; Czornomaz, Lukas; Mensch, Philipp; Hopstaken, Marinus; Fuhrer, Andreas

Ohmic conduction of sub-10 nm P-doped silicon nanowires at cryogenic temperatures

APPLIED PHYSICS LETTERS

IF3.6

2008-02-04

PREAI

Ruess, F. J.; Micolich, A. P.; Pok, W.; Goh, K. E. J.; Hamilton, A. R.; Simmons, M. Y.

Structural and electrical characterization of room temperature ultra-high-vacuum compatible SiO2 for gating scanning tunneling microscope-patterned devices

APPLIED PHYSICS LETTERS

IF3.6

2007-11-28

PREAI

Scappucci, G.; Ratto, F.; Thompson, D. L.; Reusch, T. C. G.; Pok, W.; Ruess, F. J.; Rosei, F.; Simmons, M. Y.

One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy

PHYSICAL REVIEW B

IF3.7

2007-08-02

PREAI

Ruess, Frank J.; Weber, Bent; Goh, Kuan Eng J.; Klochan, Oleh; Hamilton, Alex R.; Simmons, Michelle Y.

Realization of atomically controlled dopant devices in silicon 在硅中实现原子控制的掺杂剂器件

SMALL

IF12.1

2007-03-22

111

PREAI

Ruess, Frank J.; Pok, Wilson; Reusch, Thilo C. G.; Butcher, Matthew J.; Goh, Kuan Eng J.; Oberbeck, Lars; Scappucci, Giordano; Hamilton, Alex R.; Simmons, Michelle Y.

Electronic properties of atomically abrupt tunnel junctions in silicon

PHYSICAL REVIEW B

IF3.7

2007-03-21

PREAI

Ruess, F. J.; Pok, W.; Goh, K. E. J.; Hamilton, A. R.; Simmons, M. Y.

Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy

APPLIED PHYSICS LETTERS

IF3.6

2005-04-01

PREAI

Hallam, T; Ruess, FJ; Curson, NJ; Goh, KEJ; Oberbeck, L; Simmons, MY; Clark, RG

Toward atomic-scale device fabrication in silicon using scanning probe microscopy

NANO LETTERS

IF9.1

2004-09-28

153

PREAI

Ruess, FJ; Oberbeck, L; Simmons, MY; Goh, KEJ; Hamilton, AR; Hallam, T; Schofield, SR; Curson, NJ; Clark, RG

Progress in silicon-based quantum computing 硅基量子计算研究进展

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

IF3.7

2003-07-15

PREAI

Clark, RG; Brenner, R; Buehler, TM; Chan, V; Curson, NJ; Dzurak, AS; Gauja, E; Goan, HS; Greentree, AD; Hallam, T; Hamilton, AR; Hollenberg, LCL; Jamieson, DN; McCallum, JC; Milburn, GJ; O'Brien, JL; Oberbeck, L; Pakes, CI; Prawer, SD; Reilly, DJ; Ruess, FJ; Schofield, SR; Simmons, MY; Stanley, FE; Starrett, RP; Wellard, C; Yang, C

Competition between surface barriers and bulk pinning in a Nd2-xCexCuO4-y single crystal down to T/Tc=0.02

PHYSICAL REVIEW B

IF3.7

1998-01-01

PREAI

de Andrade, MC; Dilley, NR; Ruess, FJ; Maple, MB

研究方向