L. Oberbeck - Publications, H-index & Citations

L. Oberbeck

institut photovoltaïque d'ile-de-france

27H指数

107论文数

2.3K被引数

收录论文 22

发表时间

Comparison of the environmental impacts of perovskite/silicon tandem and silicon heterojunction photovoltaic modules using a parameterised approach 采用参数化方法比较钙钛矿/硅叠层和硅异质结光伏组件的环境影响

Cleaner Environmental Systems

IF4.9

2025-12-27

OAAI

Lu WANG; Mathilde MARCHAND; Lars OBERBECK; Raphaël JOLIVET; Alejandra CUE GONZALEZ; Paula PEREZ-LOPEZ

Prospective Techno-Economic Analysis of 4T and 2T Perovskite on Silicon Tandem Photovoltaic Modules at GW-Scale Production 在GW规模生产的硅串联光伏组件上对4t和2t钙钛矿的前瞻性技术经济分析

SOLAR RRL

IF4.7

2023-10-05

PREAI

Hull, Matthew; Rousset, Jean; Nguyen, Van Son; Grand, Pierre-Philippe; Oberbeck, Lars

IPVF's PV technology vision for 2030

PROGRESS IN PHOTOVOLTAICS

IF7.6

2020-07-20

OAAI

Oberbeck, Lars; Alvino, Katherine; Goraya, Baljeet; Jubault, Marie

Simulation study of GaAsP/Si tandem solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2016-02-01

OAAI

Onno, Arthur; Harder, Nils-Peter; Oberbeck, Lars; Liu, Huiyun

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

APPLIED PHYSICS LETTERS

IF3.6

2014-06-23

OAAI

Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby; Schofield, Steven R.; Curson, Neil J.; Simmons, Michelle Y.

Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks 组成和底部电极性能对TiN/HfTiO2和TiN/Ru/HfTiO2叠层的局部电导率的影响

APPLIED PHYSICS LETTERS

IF3.6

2011-01-05

PREAI

Martin, Dominik; Grube, Matthias; Reinig, Peter; Oberbeck, Lars; Heitmann, Johannes; Weber, Walter M.; Mikolajick, Thomas; Riechert, Henning

SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers

APPLIED PHYSICS LETTERS

IF3.6

2010-09-30

PREAI

Schmelzer, S.; Braeuhaus, D.; Hoffmann-Eifert, S.; Meuffels, P.; Boettger, U.; Oberbeck, L.; Reinig, P.; Schroeder, U.; Waser, R.

Dielectric constant and leakage of BaZrO3 films

APPLIED PHYSICS LETTERS

IF3.6

2009-04-16

PREAI

Lupina, G.; Dabrowski, J.; Dudek, P.; Kozlowski, G.; Zaumseil, P.; Lippert, G.; Fursenko, O.; Bauer, J.; Baristiran, C.; Costina, I.; Muessig, H.-J.; Oberbeck, L.; Schroeder, U.

Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

APPLIED PHYSICS LETTERS

IF3.6

2008-10-08

PREAI

Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.

Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-08-14

PREAI

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2008-01-01

PREAI

Dabrowski, J.; Lippert, G.; Oberbeck, L.; Schroeder, U.; Costina, I.; Lupina, G.; Ratzke, M.; Zaumseil, P.; Muessig, H. -J.

Realization of atomically controlled dopant devices in silicon 在硅中实现原子控制的掺杂剂器件

SMALL

IF12.1

2007-03-22

111

PREAI

Ruess, Frank J.; Pok, Wilson; Reusch, Thilo C. G.; Butcher, Matthew J.; Goh, Kuan Eng J.; Oberbeck, Lars; Scappucci, Giordano; Hamilton, Alex R.; Simmons, Michelle Y.

Influence of doping density on electronic transport in degenerate Si:P δ-doped layers -: art. no. 035401 掺杂密度对简并Si:P δ 掺杂层中电子传输的影响-: art. no. 035401

PHYSICAL REVIEW B

IF3.7

2006-01-03

PREAI

Goh, KEJ; Oberbeck, L; Simmons, MY; Hamilton, AR; Butcher, MJ

Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy

APPLIED PHYSICS LETTERS

IF3.6

2005-04-01

PREAI

Hallam, T; Ruess, FJ; Curson, NJ; Goh, KEJ; Oberbeck, L; Simmons, MY; Clark, RG

Effect of encapsulation temperature on Si:P δ-doped layers

APPLIED PHYSICS LETTERS

IF3.6

2004-11-22

PREAI

Goh, KEJ; Oberbeck, L; Simmons, MY; Hamilton, AR; Clark, RG

Toward atomic-scale device fabrication in silicon using scanning probe microscopy

NANO LETTERS

IF9.1

2004-09-28

153

PREAI

Ruess, FJ; Oberbeck, L; Simmons, MY; Goh, KEJ; Hamilton, AR; Hallam, T; Schofield, SR; Curson, NJ; Clark, RG

Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

APPLIED PHYSICS LETTERS

IF3.6

2004-08-23

OAAI

Oberbeck, L; Curson, NJ; Hallam, T; Simmons, MY; Bilger, G; Clark, RG

STM characterization of the Si-P heterodimer

PHYSICAL REVIEW B

IF3.7

2004-05-13

OAAI

Curson, NJ; Schofield, SR; Simmons, MY; Oberbeck, L; O'Brien, JL; Clark, RG

Progress in silicon-based quantum computing 硅基量子计算研究进展

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

IF3.7

2003-07-15

PREAI

Clark, RG; Brenner, R; Buehler, TM; Chan, V; Curson, NJ; Dzurak, AS; Gauja, E; Goan, HS; Greentree, AD; Hallam, T; Hamilton, AR; Hollenberg, LCL; Jamieson, DN; McCallum, JC; Milburn, GJ; O'Brien, JL; Oberbeck, L; Pakes, CI; Prawer, SD; Reilly, DJ; Ruess, FJ; Schofield, SR; Simmons, MY; Stanley, FE; Starrett, RP; Wellard, C; Yang, C

STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

APPLIED SURFACE SCIENCE

IF6.9

2003-05-01

PREAI

Oberbeck, L; Hallam, T; Curson, NJ; Simmons, MY; Clark, RG

研究方向