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W

W. Jung

Institute of Electronic Materials Technology

H指数:12

被引数:389

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n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics (vol 107, 101105, 2015)

APPLIED PHYSICS LETTERS

IF3.6

2015-09-280

OAAI

n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

APPLIED PHYSICS LETTERS

IF3.6

2015-09-1022

PREAI

The role of deep level traps in barrier height of 4H-SiC Schottky diode

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2012-09-018

PREAI

Schottky diode parameters extraction using Lambert W function

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2009-11-0141

PREAI

Electrical characterization of 6H-SiC grown by physical vapor transport method

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2009-11-011

PREAI

Electron tunneling from quantum dots characterized by deep level transient spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2007-09-2821

PREAI

Three dimensional mapping of thermal and tunneling electron emission from InAs/GaAs quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2007-07-1915

PREAI

Influence of pressure annealing on electrical properties of Mn implanted silicon

IF3.9

2007-06-014

PREAI

Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation

研究通过H2或He注入在硅中产生的近表面层中的缺陷

IF3.9

2007-05-011

PREAI

Effect of pressure annealing on structure of Si:Mn

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-02-0111

PREAI

Pressure stimulated creation of oxygen-related defects in oxygen-implanted and neutron-irradiated silicon

IF3.9

2005-05-010

PREAI

Pressure-induced formation of electrically active centres in irradiated silicon: comparison of electron and neutron irradiation

IF3.9

2005-03-012

PREAI

High-quality p-n junction fabrication by ion implantation using the LPCVD amorphous silicon films

使用LPCVD非晶硅薄膜通过离子注入制造高质量的p-n结

IF3.9

2003-03-010

PREAI

Thermo-photo-voltaic phenomena in an inhomogeneous semiconductor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2001-02-010

PREAI

Influence of intrinsic stresses on crystallographic defects distribution in Cz-Si wafers

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

IF7

2000-09-010

PREAI

Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures

IF3.9

2000-05-0117

PREAI

Oxygen aggregation in Czochralski-grown silicon heat treated at 450 degrees C under compressive stress

APPLIED PHYSICS LETTERS

IF3.6

1997-07-1430

PREAI