C. Claeys - Publications, H-index & Citations

C. Claeys

lashkaryov institute of semiconductor physics

24H指数

231论文数

2.4K被引数

收录论文 20

发表时间

Optimized diode analysis of electrical silicon substrate properties

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Czerwinski, A; Simoen, E; Claeys, C; Klima, K; Tomaszewski, D; Gibki, J; Katcki, J

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-01

PREAI

Simoen, E.; Eneman, G.; Gonzalez, M. Bargallo; Kobayashi, D.; Luque Rodriguez, A.; Jimenez Tejada, J. -A.; Claeys, C.

Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-01

OAAI

Gonzalez, M. B.; Eneman, G.; Wang, G.; De Jaeger, B.; Simoen, E.; Claeys, C.

Degradation of GaN LEDs by electron irradiation

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2010-10-01

PREAI

Ohyama, H.; Takakura, K.; Hanada, M.; Nagano, T.; Yoshino, K.; Nakashima, T.; Kuboyama, S.; Simoen, E.; Claeys, C.

On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2009-07-20

PREAI

Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Put, S.; Claeys, C.; Simoen, E.

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

APPLIED PHYSICS LETTERS

IF3.6

2009-06-11

PREAI

Gonzalez, M. Bargallo; Simoen, E.; Vissouvanadin, B.; Eneman, G.; Verheyen, P.; Loo, R.; Claeys, C.

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2009-01-01

PREAI

Simoen, E.; Huang, Y. L.; Ma, Y.; Lauwaert, J.; Clauws, P.; Rafi, J. M.; Ulyashin, A.; Claeys, C.

Stress analysis of Si1-xGex embedded source/drain junctions

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2008-10-01

PREAI

Gonzalez, M. Bargallo; Simoen, E.; Naka, N.; Okuno, Y.; Eneman, G.; Hikavyy, A.; Verheyen, P.; Loo, R.; Claeys, C.; Machkaoutsan, V.; Tomasini, P.; Thomas, S. G.; Lu, J. P.; Wise, R.

Reduced self-heating by strained silicon substrate engineering

APPLIED SURFACE SCIENCE

IF6.9

2008-07-01

PREAI

O'Neill, A.; Agaiby, R.; Olsen, S.; Yang, Y.; Hellstrom, P. -E.; Ostling, M.; Oehme, M.; Lyutovich, K.; Kasper, E.; Eneman, G.; Verheyen, P.; Loo, R.; Claeys, C.; Fiegna, C.; Sangiorgi, E.

Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2007-01-01

OAAI

Simoen, E.; Opsomer, K.; Claeys, C.; Maex, K.; Detavernier, C.; Van Meirhaeghe, R. L.; Clauws, P.

Inherent density of point defects in thermal tensile strained (100)Si/SiO2 entities probed by electron spin resonance

APPLIED PHYSICS LETTERS

IF3.6

2006-10-09

PREAI

Stesmans, A.; Somers, P.; Afanas'ev, V. V.; Claeys, C.; Simoen, E.