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K

Kiyokazu Nakagawa

University of Yamanashi

32H指数
347论文数
3.4K被引数
收录论文 30
发表时间
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Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-07-01
err0
PREAI
errFujisawa, Taisuke; Onogawa, Atsushi; Horiuchi, Miki; Sano, Yuichi; Sakata, Chihiro; Yamanaka, Junji; Hara, Kosuke O.; Sawano, Kentarou; Nakagawa, Kiyokazu; Arimoto, Keisuke
err分享
err收藏
Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si(110) by solid-source molecular beam epitaxy
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2020-07-01
err2
PREAI
errSaito, Shingo; Sano, Yuichi; Yamada, Takane; Hara, Kosuke O.; Yamanaka, Junji; Nakagawa, Kiyokazu; Arimoto, Keisuke
err分享
err收藏
Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2020-07-01
err6
PREAI
errNamiuchi, Daichi; Onogawa, Atsushi; Fujisawa, Taisuke; Sano, Yuichi; Izumi, Daisuke; Yamanaka, Junji; Hara, Kosuke O.; Sawano, Kentarou; Nakagawa, Kiyokazu; Arimoto, Keisuke
err分享
err收藏
Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2017-12-01
err13
PREAI
errHara, Kosuke O.; Yamamoto, Chiaya; Yamanaka, Junji; Arimoto, Keisuke; Nakagawa, Kiyokazu; Usami, Noritaka
err分享
err收藏
Optical anisotropies of Si grown on step-graded SiGe(110) layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-03-01
err6
PREAI
errBalderas-Navarro, R. E.; Lastras-Martinez, L. F.; Arimoto, K.; Castro-Garcia, R.; Villalobos-Aguilar, O.; Lastras-Martinez, A.; Nakagawa, K.; Sawano, K.; Shiraki, Y.; Usami, N.; Nakajima, K.
err分享
err收藏
Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-09-24
err27
errOAAI
errSawano, K.; Toyama, K.; Masutomi, R.; Okamoto, T.; Usami, N.; Arimoto, K.; Nakagawa, K.; Shiraki, Y.
err分享
err收藏
Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-05-15
err7
PREAI
errSawano, K.; Fukumoto, A.; Hoshi, Y.; Shiraki, Y.; Yamanaka, J.; Nakagawa, K.
err分享
err收藏
Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques通过电子回旋共振等离子体氮化和溅射沉积技术制造用于Ge金属-绝缘体-半导体结构的Ta2O5/GeNx栅极绝缘体叠层
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-04-05
err21
PREAI
errOtani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu
err分享
err收藏
Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-11-06
err11
PREAI
errMitsui, Minoru; Arimoto, Keisuke; Yamanaka, Junji; Nakagawa, Kiyokazu; Sawano, Kentarou; Shiraki, Yasuhiro
err分享
err收藏
Magnetotransport properties of Ge channels with extremely high compressive strain
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-10-17
err16
PREAI
errSawano, K.; Kunishi, Y.; Shiraki, Y.; Toyama, K.; Okamoto, T.; Usami, N.; Nakagawa, K.
err分享
err收藏
Compressive strain dependence of hole mobility in strained Ge channels
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-10-31
err35
PREAI
errSawano, K; Abe, Y; Satoh, H; Shiraki, Y; Nakagawa, K
err分享
err收藏
Changes in elastic deformation of strained Si by microfabrication
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2005-02-01
err9
PREAI
errArimoto, K; Furukawa, D; Yamanaka, J; Nakagawa, K; Sawano, K; Koh, S; Shiraki, Y; Usami, N
err分享
err收藏
Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2005-02-01
err6
PREAI
errSawano, K; Usami, N; Arimoto, K; Koh, S; Nakagawa, K; Shiraki, Y
err分享
err收藏
Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2005-01-01
err1
PREAI
errArimoto, K; Furukawa, D; Yamanaka, J; Nakagawa, K; Sawano, K; Koh, S; Shiraki, Y; Usami, N
err分享
err收藏
Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-09-27
err40
PREAI
errSawano, K; Koh, S; Shiraki, Y; Ozawa, Y; Hattori, T; Yamanaka, J; Suzuki, K; Arimoto, K; Nakagawa, K; Usami, N
err分享
err收藏
Formation of thin SiGe virtual substrates by ion implantation into Si substrates
errAPPLIED SURFACE SCIENCE
IF6.9
err2004-03-01
err7
PREAI
errSawano, K; Koh, S; Hirose, Y; Hattori, T; Nakagawa, K; Shiraki, Y
err分享
err收藏
Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2004-01-01
err1
PREAI
errYamanaka, J; Sawano, K; Nakagawa, K; Suzuki, K; Ozawa, Y; Koh, S; Hattori, T; Shiraki, Y
err分享
err收藏
In-plane strain fluctuation in strained-Si/SiGe heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-11-24
err54
PREAI
errSawano, K; Koh, S; Shiraki, Y; Usami, N; Nakagawa, K
err分享
err收藏
Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-03-03
err47
PREAI
errIrisawa, T; Myronov, M; Mironov, OA; Parker, EHC; Nakagawa, K; Murata, M; Koh, S; Shiraki, Y
err分享
err收藏
Influence of siliconizing on the oxidation behavior of a γ-TiAl based alloy
errINTERMETALLICS
IF4.8
err2003-02-01
err76
PREAI
errLi, XY; Taniguchi, S; Matsunaga, Y; Nakagawa, K; Fujita, K
err分享
err收藏

研究方向

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合作学者
合作期刊
T
Takanori Hattori
H 指数: 57 · 论文数: 791
K
Kiyotaka Nakajima
H 指数: 51 · 论文数: 308
N
Noritaka Usami
H 指数: 48 · 论文数: 864
T
Takuo Tanaka
H 指数: 45 · 论文数: 421
Y
Yasuhiro Abe
H 指数: 44 · 论文数: 724
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