B. G. Svensson - Publications, H-index & Citations

B. G. Svensson

university of oslo

43H指数

393论文数

6.0K被引数

收录论文 53

发表时间

Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment

PHYSICAL REVIEW B

IF3.7

2019-07-08

OAAI

Bathen, M. E.; Coutinho, J.; Ayedh, H. M.; Ul Hassan, J.; Farkas, I; Oberg, S.; Frodason, Y. K.; Svensson, B. G.; Vines, L.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-01

PREAI

Nipoti, Roberta; Ayedh, Hussein M.; Svensson, Bengt Gunnar

Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

APPLIED PHYSICS LETTERS

IF3.6

2016-04-15

PREAI

Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvag, O. S.; Diplas, S.; Lovvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnaes, A. E.

Cubic silicon carbide as a potential photovoltaic material

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2016-02-01

OAAI

Syvajarvi, Mikael; Ma, Quanbao; Jokubavicius, Valdas; Galeckas, Augustinas; Sun, Jianwu; Liu, Xinyu; Jansson, Mattias; Wellmann, Peter; Linnarsson, Margareta; Runde, Paal; Johansen, Bertil Andre; Thogersen, Annett; Diplas, Spyros; Carvalho, Patricia Almeida; Lovvik, Ole Martin; Wright, Daniel Nilsen; Azarov, Alexander Yu; Svensson, Bengt G.

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

APPLIED PHYSICS LETTERS

IF3.6

2015-12-22

PREAI

Ayedh, H. M.; Nipoti, R.; Hallen, A.; Svensson, B. G.

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

APPLIED PHYSICS LETTERS

IF3.6

2015-07-13

OAAI

Riise, Heine Nygard; Schumann, Thomas; Azarov, Alexander; Huebner, Rene; Skorupa, Wolfgang; Svensson, Bengt G.; Monakhov, Edouard

Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (vol 47, 342001, 2014)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-09-10

OAAI

Chan, K. S.; Ton-That, C.; Vines, L.; Choi, S.; Phillips, M. R.; Svensson, B. G.; Jagadish, C.; Wong-Leung, J.

Hydrogen induced optically-active defects in silicon photonic nanocavities

OPTICS EXPRESS

IF3.3

2014-04-07

OAAI

Boninelli, S.; Franzo, G.; Cardile, P.; Priolo, F.; Lo Savio, R.; Galli, M.; Shakoor, A.; O'Faolain, L.; Krauss, T. F.; Vines, L.; Svensson, B. G.

Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen

PHYSICAL REVIEW B

IF3.7

2012-02-23

PREAI

Bleka, J. H.; Malmbekk, H.; Monakhov, E. V.; Svensson, B. G.; Avset, B. S.

Identification of substitutional Li in n-type ZnO and its role as an acceptor

PHYSICAL REVIEW B

IF3.7

2011-06-27

OAAI

Johansen, K. M.; Zubiaga, A.; Makkonen, I.; Tuomisto, F.; Neuvonen, P. T.; Knutsen, K. E.; Monakhov, E. V.; Kuznetsov, A. Yu.; Svensson, B. G.

Effect of spatial defect distribution on the electrical behavior of prominent vacancy point defects in swift-ion implanted Si

PHYSICAL REVIEW B

IF3.7

2009-02-19

PREAI

Vines, L.; Monakhov, E. V.; Jensen, J.; Kuznetsov, A. Yu.; Svensson, B. G.

Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2008-04-09

PREAI

Wong-Leung, J.; Svensson, B. G.

Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon

PHYSICAL REVIEW B

IF3.7

2008-02-26

PREAI

Bleka, J. H.; Pintilie, I.; Monakhov, E. V.; Avset, B. S.; Svensson, B. G.

Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2008-01-01

PREAI

Mannino, Giovanni; La Magna, Antonino; Privitera, Vittorio; Christensen, Jens S.; Vines, Lasse; Svensson, Bengt G.

Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

APPLIED PHYSICS LETTERS

IF3.6

2007-07-31

OAAI

Avice, M.; Diplas, S.; Thogersen, A.; Christensen, J. S.; Grossner, U.; Svensson, B. G.; Nilsen, O.; Fjellvag, H.; Watts, J. F.

Epitaxial silicon devices for dosimetry applications

APPLIED PHYSICS LETTERS

IF3.6

2007-04-25

OAAI

Bruzzi, M.; Bucciolini, M.; Casati, M.; Menichelli, D.; Talamonti, C.; Piemonte, C.; Svensson, B. G.

Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers

APPLIED PHYSICS LETTERS

IF3.6

2007-02-07

PREAI

Pintilie, I.; Grossner, U.; Svensson, B. G.; Irmscher, K.; Thomas, B.

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

APPLIED PHYSICS LETTERS

IF3.6

2006-12-19

PREAI

Fortunato, G.; Mariucci, L.; Cuscuna, M.; Privitera, V.; La Magna, A.; Spinella, C.; Magri, A.; Camalleri, M.; Salinas, D.; Simon, F.; Svensson, B.; Monakhov, E.

Influence of temperature during phosphorus emitter diffusion from a spray-on source in multicrystalline silicon solar cell processing

PROGRESS IN PHOTOVOLTAICS

IF7.6

2006-09-27

PREAI

Bentzen, A.; Schubert, G.; Christensen, J. S.; Svensson, B. G.; Holt, A.

Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-08-01

PREAI

Ulyashin, A. G.; Abrosimov, N. V.; Bentzen, A.; Suphellen, A.; Sauar, E.; Svensson, B. G.

研究方向