O. P. Pchelyakov - Publications, H-index & Citations

O. P. Pchelyakov

russian academy of sciences

23H指数

178论文数

2.0K被引数

收录论文 10

发表时间

Surface structure of thin pseudomorphous GeSi layers

APPLIED SURFACE SCIENCE

IF6.9

2015-11-01

PREAI

Nikiforov, A. I.; Timofeev, V. F.; Pchelyakov, O. P.

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2014-01-01

PREAI

Sun, Weiguo; Fan, Huitao; Peng, Zhenyu; Zhang, Liang; Zhang, Xiaolei; Zhang, Lei; Lu, Zhengxiong; Si, Junjie; Emelyanov, E.; Putyato, M.; Semyagin, B.; Pchelyakov, O.; Preobrazhenskii, V.

MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

IF4.9

2008-02-01

PREAI

Pchelyakov, O. P.; Nikiforov, A. I.; Shanetsky, B. Z.; Teys, S. A.; Yakimov, A. I.; Chikichev, S. I.

Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2005-02-01

PREAI

Nikiforov, AI; Ulyanov, VV; Pchelyakov, OP; Teys, SA; Gutakovsky, AK

Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

APPLIED PHYSICS LETTERS

IF3.6

2002-07-15

PREAI

Yakimov, AI; Derjabin, AS; Sokolov, LV; Pchelyakov, OP; Dvurechenskii, AV; Moiseeva, MM; Sokolov, NS

Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots

PHYSICAL REVIEW B

IF3.7

2000-12-15

PREAI

Yakimov, AI; Dvurechenskii, AV; Nikiforov, AI; Pchelyakov, OP; Nenashev, AV

Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer

APPLIED SURFACE SCIENCE

IF6.9

2000-10-01

PREAI

Kolesnikov, AV; Vasilenko, AP; Trukhanov, EM; Sokolov, LV; Fedorov, AA; Pchelyakov, OP; Romanov, SI

GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon

APPLIED PHYSICS LETTERS

IF3.6

1999-12-27

PREAI

Romanov, SI; Mashanov, VI; Sokolov, LV; Gutakovskii, A; Pchelyakov, OP

Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots

APPLIED PHYSICS LETTERS

IF3.6

1999-09-06

124

PREAI

Yakimov, AI; Dvurechenskii, AV; Proskuryakov, YY; Nikiforov, AI; Pchelyakov, OP; Teys, SA; Gutakovskii, AK

Hopping conduction and field effect in Si modulation-doped structures with embedded Ge quantum dots

PHYSICAL REVIEW B

IF3.7

1999-05-15

PREAI

Biskupski, G; Adkins, CJ; Boucher, R; Dvurechenskii, AV; Nikiforov, AI; Pchelyakov, OP; Biskupski, G

研究方向