G. V. Hansson - Publications, H-index & Citations

G. V. Hansson

Linkoping University

39H指数

289论文数

5.5K被引数

收录论文 39

发表时间

Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2010-05-06

OAAI

Adnane, B.; Karlsson, K. F.; Hansson, G. V.; Holtz, P. O.; Ni, W. -X.

Electronic structure of Ge(111)c(2x8): STM, angle-resolved photoemission, and theory

PHYSICAL REVIEW B

IF3.7

2009-05-14

OAAI

Razado-Colambo, I.; He, Jiangping; Zhang, H. M.; Hansson, G. V.; Uhrberg, R. I. G.

High-temperature annealing and surface photovoltage shifts on Si(111)7x7

PHYSICAL REVIEW B

IF3.7

2008-07-21

OAAI

Zhang, H. M.; Sakamoto, Kazuyuki; Hansson, G. V.; Uhrberg, R. I. G.

Type-I optical emissions in Ge/Si quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2007-08-02

PREAI

Gomes, P. F.; Iikawa, F.; Cerdeira, F.; Larsson, M.; Elfving, A.; Hansson, G. V.; Ni, W.-X.; Holtz, P.-O.

Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping

APPLIED PHYSICS LETTERS

IF3.6

2006-10-30

PREAI

Elfving, A.; Zhao, M.; Hansson, G. V.; Ni, W. -X.

Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection

APPLIED PHYSICS LETTERS

IF3.6

2006-08-23

PREAI

Elfving, A.; Karim, A.; Hansson, G. V.; Ni, W. -X.

Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy

PHYSICAL REVIEW B

IF3.7

2006-05-22

OAAI

Larsson, M.; Elfving, A.; Ni, W. -X.; Hansson, G. V.; Holtz, P. O.

Atomic structure of the carbon induced Si(001)-c(4 X 4) surface 碳诱导Si(001)-c(4 x4) 表面的原子结构

APPLIED SURFACE SCIENCE

IF6.9

2006-05-01

PREAI

He, Jiangping; Hansson, G. V.; Uhrberg, R. I. G.

Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si/Ge quantum dots (vol 71, art no 113301, 2005)

PHYSICAL REVIEW B

IF3.7

2005-03-15

OAAI

Larsson, M; Holtz, PO; Elfving, A; Hansson, GV; Ni, WX

Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si/Ge quantum dots

PHYSICAL REVIEW B

IF3.7

2005-03-02

OAAI

Larsson, M; Holtz, PO; Elfving, A; Hansson, GV; Ni, WX

Photoluminescence studies of Sn quantum dots in Si grown by MBE

OPTICAL MATERIALS

IF4.2

2005-02-01

PREAI

Karim, A; Hansson, GV; Ni, WX; Holtz, PO; Larsson, M; Atwater, HA

Spatially direct and indirect transitions observed for Si/Ge quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2003-06-30

PREAI

Larsson, M; Elfving, A; Holtz, PO; Hansson, GV; Ni, WX

Bias-dependent scanning tunneling microscopy study of the oxygen-adsorbed Si(111)-(7x7) surface: Observation of metastable molecular oxygen

PHYSICAL REVIEW B

IF3.7

2002-03-26

OAAI

Sakamoto, K; Jemander, ST; Hansson, GV; Uhrberg, RIG

Resonant scattering in delta-doped heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2001-10-29

PREAI

Robinson, IK; Nilsson, PO; Debowska-Nilsson, D; Ni, WX; Hansson, GV

Formation of Ni-graphite intercalation compounds on SiC

PHYSICAL REVIEW B

IF3.7

2001-09-18

PREAI

Robbie, K; Jemander, ST; Lin, N; Hallin, C; Erlandsson, R; Hansson, GV; Madsen, LD

Electronic structure of ultrathin Ge layers buried in Si(100)

PHYSICAL REVIEW B

IF3.7

2001-08-24

PREAI

Nilsson, PO; Mankefors, S; Guo, J; Nordgren, J; Debowska-Nilsson, D; Ni, WX; Hansson, GV

Er/O doped Si1-xGex alloy layers grown by MBE

OPTICAL MATERIALS

IF4.2

2001-06-01

PREAI

Duteil, F; Du, CX; Järrendahl, K; Ni, WX; Hansson, GV

Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

APPLIED PHYSICS LETTERS

IF3.6

2001-04-09

PREAI

Hansson, GV; Ni, WX; Du, CX; Elfving, A; Duteil, F

Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2000-10-01

PREAI

Duteil, F; Du, CX; Joelsson, KB; Persson, POA; Hultman, L; Pozina, G; Ni, WX; Hansson, GV

Electronic structure of Sn/Si(111) √3X√3:: Indications of a low-temperature phase

PHYSICAL REVIEW B

IF3.7

2000-09-15

OAAI

Uhrberg, RIG; Zhang, HM; Balasubramanian, T; Jemander, ST; Lin, N; Hansson, GV

研究方向