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Y. Monteil

Universite Claude Bernard Lyon 1

24H指数
286论文数
2.0K被引数
收录论文 25
发表时间
Magnetic Properties of Hematite Nanotubes Elaborated by Electrospinning Process
err2011-08-22
err40
PREAI
errEid, Cynthia; Luneau, Dominique; Salles, Vincent; Asmar, Roy; Monteil, Yves; Khoury, Antonio; Brioude, Arnaud
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Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD
err2010-09-01
err27
PREAI
errHamila, R.; Saidi, F.; Rodriguez, P. H.; Auvray, L.; Monteil, Y.; Maaref, H.
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AES, LEED and PYS investigation of Au deposits on InSe/Si(111) substrate
err2010-03-01
err5
PREAI
errAbidri, B.; Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Hiadsi, S.; Monteil, Y.
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Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
err2010-02-01
err27
PREAI
errSaidi, F.; Hamila, R.; Maaref, H.; Rodriguez, Ph.; Auvray, L.; Monteil, Y.
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Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X = S, Se, Te)
err2009-11-01
err52
PREAI
errAbdellaoui, A.; Ghaffour, M.; Bouslama, M.; Benalia, S.; Ouerdane, A.; Abidri, B.; Monteil, Y.
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Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound
err2009-10-01
err6
PREAI
errBerrouachedi, N.; Bouslama, M.; Abdellaoui, A.; Ghaffour, M.; Jardin, C.; Hamaida, K.; Monteil, Y.; Lounis, Z.; Ouerdane, A.
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Clustering effects in optical properties of BGaAs/GaAs epilayers
err2009-09-01
err14
PREAI
errHamila, R.; Saidi, F.; Fouzri, A.; Auvray, L.; Monteil, Y.; Maaref, H.
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Study by EELS and EPES of the stability of InPO4/InP system
err2008-09-01
err10
PREAI
errOuerdane, A.; Bouslama, M.; Ghaffour, M.; Abdellaoui, A.; Hamaida, K.; Lounis, Z.; Monteil, Y.; Berrouachedi, N.; Ouhaibi, A.
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AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment
err2008-04-01
err10
PREAI
errAbdellaoui, A.; Ghaffour, M.; Ouerdane, A.; Hamaida, K.; Monteil, Y.; Berrouachedi, N.; Lounis, Z.; Bouslama, M.
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Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism
err2006-10-07
err39
PREAI
errSoueidan, Maher; Ferro, Gabriel; Nsouli, Bilal; Roumie, Mohamad; Polychroniadis, Efstathios; Kazan, Michel; Juillaguet, Sandrine; Chaussende, Didier; Habka, Nada; Stoemenos, John; Camassel, Jean; Monteil, Yves
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Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures
err2003-10-01
err20
PREAI
errDumont, H; Auvray, L; Monteil, Y; Saidi, F; Hassen, F; Maaref, H
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Surface segregation of boron in BxGa1-xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy
err2003-03-24
err29
errOAAI
errDumont, H; Rutzinger, D; Vincent, C; Dazord, J; Monteil, Y; Alexandre, F; Gentner, JL
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SiC homoepitaxial growth at low temperature by vapor-liquid-solid mechanism in Al-Si melt
err2003-03-01
err13
PREAI
errJacquier, C; Ferro, G; Cauwet, F; Chaussende, D; Monteil, Y
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Nature effect of the gas during high temperature treatments of 4H-SiC substrates
err2003-02-01
err7
PREAI
errYounes, G; Ferro, G; Jacquier, C; Dazord, J; Monteil, Y
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Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide
err2002-01-01
err20
PREAI
errJacquier, C; Chaussende, D; Ferro, G; Viala, JC; Cauwet, F; Monteil, Y
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Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings
err2001-12-01
err7
PREAI
errOttaviani, L; Lazar, M; Locatelli, ML; Monteil, Y; Heera, V; Voelskow, M; Skorupa, W
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Thermochemistry of silicon carbide growth by chemical transport reactions
err2001-01-01
err4
PREAI
errChaussende, D; Ferro, G; Monteil, Y; Brylinski, C; Bouix, J
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