R. I. Hegde - Publications, H-index & Citations

R. I. Hegde

机构信息待补充

28H指数

93论文数

2.6K被引数

收录论文 11

发表时间

Characterization of HfO2 dielectric films with low energy SIMS

APPLIED SURFACE SCIENCE

IF6.9

2006-07-01

PREAI

Jiang, Z. X.; Kim, K.; Lerma, J.; Sieloff, D.; Tseng, H.; Hegde, R. I.; Luo, T. Y.; Yang, J. Y.; Triyoso, D. H.; Tobin, P. J.

Impact of Zr addition on properties of atomic layer deposited HfO2

APPLIED PHYSICS LETTERS

IF3.6

2006-06-01

PREAI

Triyoso, DH; Hegde, RI; Schaeffer, JK; Roan, D; Tobin, PJ; Samavedam, SB; White, BE; Gregory, R; Wang, XD

Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2-TiO2 gate dielectrics

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

PREAI

Triyoso, D. H.; Hegde, R. I.; Wang, X. -D.; Stoker, M. W.; Rai, R.; Ramon, M. E.; White, B. E., Jr.; Tobin, P. J.

Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2005-01-01

PREAI

Triyoso, DH; Ramon, M; Hegde, RI; Roan, D; Garcia, R; Baker, J; Wang, XD; Fejes, P; White, BE; Tobin, PJ

Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2004-01-01

PREAI

Bastos, KP; Morais, J; Miotti, L; Soares, GV; Pezzi, RP; da Silva, RCG; Boudinov, H; Baumvol, IJR; Hegde, RI; Tseng, HH; Tobinc, PJ

HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2003-01-01

OAAI

Schaeffer, J; Edwards, NV; Liu, R; Roan, D; Hradsky, B; Gregory, R; Kulik, J; Duda, E; Contreras, L; Christiansen, J; Zollner, S; Tobin, P; Nguyen, BY; Nieh, R; Ramon, M; Rao, R; Hegde, R; Rai, R; Baker, J; Voight, S

Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

APPLIED PHYSICS LETTERS

IF3.6

2002-08-26

OAAI

Bastos, KP; Morais, J; Miotti, L; Pezzi, RP; Soares, GV; Baumvol, IJR; Hegde, RI; Tseng, HH; Tobin, PJ

Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films

APPLIED PHYSICS LETTERS

IF3.6

2002-08-19

PREAI

Liu, CL; Jiang, ZX; Hegde, RI; Sieloff, DD; Rai, RS; Gilmer, DC; Hobbs, CC; Tobin, PJ; Lu, SF

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

APPLIED PHYSICS LETTERS

IF3.6

2002-08-12

PREAI

Gilmer, DC; Hegde, R; Cotton, R; Garcia, R; Dhandapani, V; Triyoso, D; Roan, D; Franke, A; Rai, R; Prabhu, L; Hobbs, C; Grant, JM; La, L; Samavedam, S; Taylor, B; Tseng, H; Tobin, P

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2000-06-01

PREAI

Tseng, HH; Veteran, J; Tobin, PJ; Mogab, J; Tsui, PGY; Wang, V; Khare, M; Wang, XW; Ma, TP; Hobbs, C; Hegde, R; Hartig, M; Kenig, G; Blumenthal, R; Cotton, R; Kaushik, V; Tamagawa, T; Halpern, BL; Cui, GJ; Schmitt, JJ

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

APPLIED PHYSICS LETTERS

IF3.6

1999-12-20

223

PREAI

Klein, TM; Niu, D; Epling, WS; Li, W; Maher, DM; Hobbs, CC; Hegde, RI; Baumvol, IJR; Parsons, GN

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