A. Stintz - Publications, H-index & Citations

A. Stintz

university of new mexico

39H指数

243论文数

5.5K被引数

收录论文 25

发表时间

Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures AlGaInAs限制势垒的组成对嵌入在AlGaAs/GaAs阱内异质结构中的InAs量子点的发射的影响

OPTICAL MATERIALS

IF4.2

2024-10-01

PREAI

Torchynska, T.; Cisneros-Tamayo, R.; Moreno, I. J. Guerrero; Polupan, G.; Stintz, A.

AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots AlGaInAs覆盖层对含InAs量子点的AlGaAs/GaAs量子阱的发射和结构的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-02-01

PREAI

Cisneros Tamayo, R.; Polupan, G.; Torchynska, T., V; Vega-Macotela, L. G.; Stintz, A.; Escobosa Echavarria, A.

Increased normal incidence photocurrent in quantum dot infrared photodetectors

APPLIED PHYSICS LETTERS

IF3.6

2012-12-12

OAAI

Shao, Jiayi; Vandervelde, Thomas E.; Barve, Ajit; Stintz, Andreas; Krishna, Sanjay

1220-1280-nm Optically Pumped InAs Quantum Dot-Based Vertical External-Cavity Surface-Emitting Laser

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2011-11-01

PREAI

Albrecht, Alexander R.; Stintz, Andreas; Jaeckel, Felix T.; Rotter, Thomas J.; Ahirwar, Pankaj; Patel, Victor J.; Hains, Christopher P.; Lester, Luke F.; Malloy, Kevin J.; Balakrishnan, Ganesh

Resistance to edge recombination in GaAs-based dots-in-a-well solar cells

APPLIED PHYSICS LETTERS

IF3.6

2009-12-30

PREAI

Gu, Tingyi; El-Emawy, Mohamed A.; Yang, Kai; Stintz, Andreas; Lester, Luke F.

Low-bias, high-temperature operation of an InAs-InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7 μm

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2009-01-01

PREAI

Vaillancourt, Jarrod; Stintz, Andreas; Meisner, Mark J.; Lu, Xuejun

Time-resolved linewidth enhancement factors in quantum dot and higher-dimensional semiconductor amplifiers operating at 1.55 μm 工作在1.55微米的量子点和高维半导体放大器中的时间分辨线宽增强因子

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2008-06-01

PREAI

Zilkie, Aaron J.; Meier, Joachim; Mojahedi, Mo; Helmy, Amr S.; Poole, Philip J.; Barrios, Pedro; Poitras, Daniel; Rotter, Thomas J.; Yang, Chi; Stintz, Andreas; Malloy, Kevin J.; Smith, Peter W. E.; Aitchison, J. Stewart

Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure

OPTICS EXPRESS

IF3.3

2008-01-01

OAAI

Prasankumar, R. P.; Attaluri, R. S.; Averitt, R. D.; Urayama, J.; Weisse-Bernstein, N.; Rotella, P.; Stintz, A. D.; Krishna, S.; Taylor, A. J.

Long wave infrared InAs-InGaAs quantum-dot infrared photodetector with high operating temperature over 170K

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2007-09-21

PREAI

Lu, Xuejun; Vaillancourt, Jarrod; Meisner, Mark J.; Stintz, Andreas

Single bump, two-color quantum dot camera

APPLIED PHYSICS LETTERS

IF3.6

2007-08-24

PREAI

Varley, E.; Lenz, M.; Lee, S. J.; Brown, J. S.; Ramirez, D. A.; Stintz, A.; Krishna, S.; Reisinger, Axel; Sundaram, Mani

n-type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency

OPTICS LETTERS

IF3.3

2007-04-17

PREAI

Weerasekara, Aruna; Rinzan, Mohamad; Matsik, Steven; Perera, A. G. Unil; Buchanan, Margaret; Liu, Hui Chun; von Winckel, Greg; Stintz, Andreas; Krishna, Sanjay

Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2007-04-01

PREAI

Weerasekara, A. B.; Rinzan, M. B. M.; Matsik, S. G.; Perera, A. G. U.; Buchanan, M.; Liu, H. C.; von Winckel, G.; Stintz, A.; Krishna, S.

High operating temperature split-off band infrared detectors

APPLIED PHYSICS LETTERS

IF3.6

2006-09-29

PREAI

Perera, A. G. U.; Matsik, S. G.; Jayaweera, P. V. V.; Tennakone, K.; Liu, H. C.; Buchanan, M.; Von Winckel, G.; Stintz, A.; Krishna, S.