K. Jarašiūnas - Publications, H-index & Citations

K. Jarašiūnas

Vilnius University

27H指数

269论文数

2.3K被引数

收录论文 25

发表时间

Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K

PHYSICAL REVIEW B

IF3.7

2020-07-01

PREAI

Miasojedovas, S.; Scajev, P.; Jaragsiunas, K.; Gil, B.; Miyake, H.

Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

JOURNAL OF LUMINESCENCE

IF3.6

2019-08-01

OAAI

Scajev, Patrik; Miasojedovas, Saulius; Subacius, Liudvikas; Jarasiunas, Kestutis; Mazanik, Alexander V.; Korolik, Olga V.; Kato, Masashi

Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

JOURNAL OF LUMINESCENCE

IF3.6

2017-08-01

PREAI

Nomeika, K.; Aleksiejunas, R.; Miasojedovas, S.; Tomasiunas, R.; Jarasiunas, K.; Pietzonka, I.; Strassburg, M.; Lugauer, H. -J.

Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-12-12

PREAI

Liaugaudas, Gediminas; Dargis, Donatas; Kwasnicki, Pawel; Arvinte, Roxana; Zielinski, Marcin; Jarasiunas, Kestutis

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

APPLIED PHYSICS LETTERS

IF3.6

2014-01-16

PREAI

Aleksiejunas, R.; Gelzinyte, K.; Nargelas, S.; Jarasiunas, K.; Vengris, M.; Armour, E. A.; Byrnes, D. P.; Arif, R. A.; Lee, S. M.; Papasouliotis, G. D.

Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2013-06-11

PREAI

Scajev, Patrik; Jarasiunas, Kestutis

Radiative and nonradiative recombination rates in cubic SiC

JOURNAL OF LUMINESCENCE

IF3.6

2013-02-01

PREAI

Scajev, Patrik; Karaliunas, Mindaugas; Kuokstis, Edmundas; Jarasiunas, Kestutis

Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions

APPLIED PHYSICS LETTERS

IF3.6

2012-07-23

PREAI

Li, X.; Okur, S.; Zhang, F.; Hafiz, S. A.; Avrutin, V.; Ozgur, U.; Morkoc, H.; Jarasiunas, K.

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

APPLIED PHYSICS LETTERS

IF3.6

2012-01-13

PREAI

Scajev, P.; Jarasiunas, K.; Ozgur, U.; Morkoc, H.; Leach, J.; Paskova, T.

Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample

OPTICS EXPRESS

IF3.3

2011-09-14

OAAI

Wang, Hsiang-Chen; Yu, Xuan-Yu; Chueh, Yu-Lun; Malinauskas, Tadas; Jarasiunas, Kestutis; Feng, Shih-Wei

A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H-and 6H-SiC crystals

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-08-23

OAAI

Scajev, Patrik; Kato, Masashi; Jarasiunas, Kestutis

Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers

APPLIED PHYSICS LETTERS

IF3.6

2011-05-19

PREAI

Scajev, Patrik; Usikov, Alexander; Soukhoveev, Vitali; Aleksiejunas, Ramunas; Jarasiunas, Kestutis

Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique

APPLIED PHYSICS LETTERS

IF3.6

2011-02-25

PREAI

Nargelas, S.; Jarasiunas, K.; Bertulis, K.; Pacebutas, V.

Excess carrier recombination lifetime of bulk n-type 3C-SiC

APPLIED PHYSICS LETTERS

IF3.6

2009-12-16

PREAI

Grivickas, Vytautas; Manolis, Georgios; Gulbinas, Karolis; Jarasiunas, Kestutis; Kato, Masashi

Dynamics of free carrier absorption in InN layers

APPLIED PHYSICS LETTERS

IF3.6

2009-10-20

PREAI

Nargelas, S.; Aleksiejunas, R.; Vengris, M.; Malinauskas, T.; Jarasiunas, K.; Dimakis, E.

Optical and electron beam studies of carrier transport in quasibulk GaN

APPLIED PHYSICS LETTERS

IF3.6

2009-08-31

OAAI

Lin, Y.; Flitsyian, E.; Chernyak, L.; Malinauskas, T.; Aleksiejunas, R.; Jarasiunas, K.; Lim, W.; Pearton, S. J.; Gartsman, K.

Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H-SiC crystals

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2009-02-19

PREAI

Scajev, P.; Jarasiunas, K.

Advantages of the time-resolved four-wave mixing technique for studies of non-equilibrium carrier dynamics in bulk semiconductors and structures

OPTICAL MATERIALS

IF4.2

2008-01-01

PREAI

Aleksiejunas, R.; Kadys, A.; Malinauskas, T.; Neimontas, K.; Gudefis, V.; Jarasiunas, K.; Fochuk, P.; Feychuk, P.

All-optical analysis of carrier and spin relaxation in InGaAs/GaAs saturable-absorber structures

APPLIED PHYSICS LETTERS

IF3.6

2007-03-06

PREAI

Aleksiejunas, Ramunas; Kadys, Arunas; Jarasiunas, Kestutis; Saas, Florian; Griebner, Uwe; Tomm, Jens W.

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

APPLIED PHYSICS LETTERS

IF3.6

2006-05-18

PREAI

Malinauskas, T.; Jarasiunas, K.; Miasojedovas, S.; Jursenas, S.; Beaumont, B.; Gibart, P.

研究方向