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R

R. G. Wilson

机构信息待补充

49H指数
366论文数
7.9K被引数
收录论文 32
发表时间
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Optical properties of the nitrogen vacancy in AlN epilayers
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-02-16
err45
errOAAI
errNepal, N; Nam, KB; Nakarmi, ML; Lin, JY; Jiang, HX; Zavada, JM; Wilson, RG
err分享
err收藏
Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2004-02-01
err53
PREAI
errPolyakov, AY; Govorkov, AV; Smirnov, NB; Pashkova, NV; Pearton, SJ; Ip, K; Frazier, RM; Abernathy, CR; Norton, DP; Zavada, JM; Wilson, RG
err分享
err收藏
Mining for high Tc ferromagnetism in ion-implanted dilute magnetic semiconductors
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2004-01-28
err68
PREAI
errHebard, AF; Rairigh, RP; Kelly, JG; Pearton, SJ; Abernathy, CR; Chu, SNG; Wilson, RG
err分享
err收藏
Ferromagnetism in cobalt-implanted ZnO
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-12-29
err254
PREAI
errNorton, DP; Overberg, ME; Pearton, SJ; Pruessner, K; Budai, JD; Boatner, LA; Chisholm, MF; Lee, JS; Khim, ZG; Park, YD; Wilson, RG
err分享
err收藏
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C -: art. no. 085210
errPHYSICAL REVIEW B
IF3.7
err2003-08-29
err29
errOAAI
errPark, YD; Lim, JD; Suh, KS; Shim, SB; Lee, JS; Abernathy, CR; Pearton, SJ; Kim, YS; Khim, ZG; Wilson, RG
err分享
err收藏
Vertical and lateral mobilities in n-(Ga, Mn)N
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-03-10
err13
PREAI
errKim, J; Ren, F; Thaler, GT; Frazier, R; Abernathy, CR; Pearton, SJ; Zavada, JM; Wilson, RG
err分享
err收藏
Ferromagnetism in Mn-implanted ZnO:Sn single crystals
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-01-13
err438
PREAI
errNorton, DP; Pearton, SJ; Hebard, AF; Theodoropoulou, N; Boatner, LA; Wilson, RG
err分享
err收藏
Thermal stability of ion-implanted hydrogen in ZnO
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-11-18
err104
PREAI
errIp, K; Overberg, ME; Heo, YW; Norton, DP; Pearton, SJ; Kucheyev, SO; Jagadish, C; Williams, JS; Wilson, RG; Zavada, JM
err分享
err收藏
Pt Schottky contacts to n-(Ga,Mn)N
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-07-22
err2
PREAI
errKim, J; Ren, F; Thaler, GT; Overberg, ME; Abernathy, CR; Pearton, SJ; Wilson, RG
err分享
err收藏
Characterization of high dose Fe implantation into p-GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-11-19
err54
PREAI
errTheodoropoulou, N; Hebard, AF; Chu, SNG; Overberg, ME; Abernathy, CR; Pearton, SJ; Wilson, RG; Zavada, JM
err分享
err收藏
Magnetic and structural properties of Mn-implanted GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-05-28
err291
PREAI
errTheodoropoulou, N; Hebard, AF; Overberg, ME; Abernathy, CR; Pearton, SJ; Chu, SNG; Wilson, RG
err分享
err收藏
The electrical characteristics of silicon carbide alloyed with germanium
errAPPLIED SURFACE SCIENCE
IF6.9
err2001-05-01
err22
PREAI
errKatulka, G; Roe, K; Kolodzey, J; Eldridge, G; Clarke, RC; Swann, CP; Wilson, RG
err分享
err收藏
Luminescence characteristics of Er-doped GaN semiconductor thin films
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2000-04-01
err35
PREAI
errZavada, JM; Thaik, M; Hömmerich, U; MacKenzie, JD; Abernathy, CR; Pearton, SJ; Wilson, RG
err分享
err收藏
Surface chemical treatment for the cleaning of AlN and GaN surfaces
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2000-01-01
err68
PREAI
errLee, KN; Donovan, SM; Gila, B; Overberg, M; Mackenzie, JD; Abernathy, CR; Wilson, RG
err分享
err收藏
Oxygen diffusion into SiO2-capped GaN during annealing
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-11-08
err85
errOAAI
errPearton, SJ; Cho, H; LaRoche, JR; Ren, F; Wilson, RG; Lee, JW
err分享
err收藏
Optical transitions in Pr-implanted GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-08-09
err32
PREAI
errZavada, JM; Mair, RA; Ellis, CJ; Lin, JY; Jiang, HX; Wilson, RG; Grudowski, PA; Dupuis, RD
err分享
err收藏
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-05-03
err85
errOAAI
errHan, J; Baca, AG; Shul, RJ; Willison, CG; Zhang, L; Ren, F; Zhang, AP; Dang, GT; Donovan, SM; Cao, XA; Cho, H; Jung, KB; Abernathy, CR; Pearton, SJ; Wilson, RG
err分享
err收藏
Electrical and optical properties of Ge-implanted 4H-SiC
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-01-25
err34
errOAAI
errKatulka, G; Guedj, C; Kolodzey, J; Wilson, RG; Swann, C; Tsao, MW; Rabolt, J
err分享
err收藏
Thermal stability of 2H-implanted n- and p-type GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-09-28
err38
PREAI
errPearton, SJ; Wilson, RG; Zavada, JM; Han, J; Shul, RJ
err分享
err收藏
Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-07-13
err78
PREAI
errCao, XA; Abernathy, CR; Singh, RK; Pearton, SJ; Fu, M; Sarvepalli, V; Sekhar, JA; Zolper, JC; Rieger, DJ; Han, J; Drummond, TJ; Shul, RJ; Wilson, RG
err分享
err收藏

研究方向

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合作学者
合作期刊
S
S. J. Pearton
H 指数: 115 · 论文数: 2.9K
F
F. Ren
H 指数: 94 · 论文数: 2.0K
D
D. P. Norton
H 指数: 90 · 论文数: 827
L
L. A. Boatner
H 指数: 81 · 论文数: 897
C
C. Jagadish
H 指数: 80 · 论文数: 1.6K
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