G. Hollinger - Publications, H-index & Citations

G. Hollinger

centre national de la recherche scientifique (cnrs)

44H指数

226论文数

9.1K被引数

收录论文 29

发表时间

Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates

APPLIED PHYSICS LETTERS

IF3.6

2011-03-01

PREAI

Merckling, C.; Saint-Girons, G.; Botella, C.; Hollinger, G.; Heyns, M.; Dekoster, J.; Caymax, M.

Evidence for the formation of two phases during the growth of SrTiO3 on silicon

PHYSICAL REVIEW B

IF3.7

2011-02-15

OAAI

Niu, G.; Penuelas, J.; Largeau, L.; Vilquin, B.; Maurice, J. L.; Botella, C.; Hollinger, G.; Saint-Girons, G.

Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates

APPLIED PHYSICS LETTERS

IF3.6

2010-11-19

PREAI

Gobaut, B.; Penuelas, J.; Cheng, J.; Chettaoui, A.; Largeau, L.; Hollinger, G.; Saint-Girons, G.

High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)

APPLIED PHYSICS LETTERS

IF3.6

2010-10-11

OAAI

El Kazzi, M.; Merckling, C.; Saint-Girons, G.; Grenet, G.; Silly, M.; Sirotti, F.; Hollinger, G.

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

APPLIED PHYSICS LETTERS

IF3.6

2009-12-11

PREAI

Cheng, J.; Aviles, T.; El Akra, A.; Bru-Chevallier, C.; Largeau, L.; Patriarche, G.; Regreny, P.; Benamrouche, A.; Robach, Y.; Hollinger, G.; Saint-Girons, G.

Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

PHYSICAL REVIEW B

IF3.7

2009-10-07

PREAI

Saint-Girons, G.; Cheng, J.; Regreny, P.; Largeau, L.; Patriarche, G.; Hollinger, G.

Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2009-07-07

PREAI

Largeau, L.; Cheng, J.; Regreny, P.; Patriarche, G.; Benamrouche, A.; Robach, Y.; Gendry, M.; Hollinger, G.; Saint-Girons, G.

Twin formation during the growth of InP on SrTiO3

APPLIED PHYSICS LETTERS

IF3.6

2009-06-08

PREAI

Cheng, J.; Largeau, L.; Patriarche, G.; Regreny, P.; Hollinger, G.; Saint-Girons, G.

X-ray photoelectron diffraction study of thin Al2O3 films grown on Si(111) by molecular beam epitaxy

PHYSICAL REVIEW B

IF3.7

2009-05-14

OAAI

El Kazzi, M.; Grenet, G.; Merckling, C.; Saint-Girons, G.; Botella, C.; Marty, O.; Hollinger, G.

Self-assembled ge nanocrystals on BaTiO3/SrTiO3/Si(001)

APPLIED PHYSICS LETTERS

IF3.6

2008-01-24

PREAI

Largeau, L.; Patriarche, G.; Saint-Girons, G.; Delhaye, G.; Hollinger, G.

Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)

APPLIED PHYSICS LETTERS

IF3.6

2007-11-09

OAAI

Becerra, L.; Merckling, C.; Baboux, N.; Plossu, C.; Marty, O.; El-Kazzi, M.; Saint-Girons, G.; Vilquin, B.; Hollinger, G.

Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-12-07

PREAI

Merckling, C.; El-Kazzi, M.; Delhaye, G.; Gendry, M.; Saint-Girons, G.; Hollinger, G.; Largeau, L.; Patriarche, G.

Photoemission (XPS and XPD) study of epitaxial LaAlO3 fiim grown on SrTiO3(001)

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-12-01

PREAI

El Kazzi, M.; Merckling, C.; Delhaye, G.; Arzel, L.; Grenet, G.; Bergignat, E.; Hollinger, G.

XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)2Sx solution

APPLIED SURFACE SCIENCE

IF6.9

2006-08-01

PREAI

Arabasz, S.; Bergignat, E.; Hollinger, G.; Szuber, J.

XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation (NH4)2Sx钝化后epiready GaAs(100) 表面化学的XPS研究

VACUUM

IF3.9

2006-06-01

PREAI

Arabasz, S; Bergignat, E; Hollinger, G; Szuber, J

Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs

OPTICS EXPRESS

IF3.3

2006-01-01

OAAI

Romeo, PR; Van Campenhout, J; Regreny, P; Kazmierczak, A; Seassal, C; Letartre, X; Hollinger, G; Van Thourhout, D; Baets, R; Fedeli, M; Di Cioccio, L

Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors

PHYSICAL REVIEW B

IF3.7

2005-09-27

PREAI

Beneyton, R; Grenet, G; Regreny, P; Gendry, M; Hollinger, G; Canut, B; Priester, C

STM and FIB nano-structuration of surfaces to localise InAs/InP(001) quantum dots STM和FIB表面纳米结构以定位InAs/InP(001) 量子点

APPLIED SURFACE SCIENCE

IF6.9

2004-03-01

PREAI

Kapsa, J; Robach, Y; Hollinger, G; Gendry, M; Gierak, J; Mailly, D

Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)

PHYSICAL REVIEW B

IF3.7

2002-11-11

PREAI

Salem, B; Benyattou, T; Guillot, G; Bru-Chevallier, C; Bremond, G; Monat, C; Hollinger, G; Gendry, M

XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(100) surface

VACUUM

IF3.9

2002-09-01

PREAI

Szuber, J; Bergignat, E; Hollinger, G; Polakowska, A; Koscielniak, P

研究方向