J.C. Zolper - Publications, H-index & Citations

J.C. Zolper

机构信息待补充

32H指数

211论文数

5.3K被引数

收录论文 10

发表时间

Wet chemical etching of AlN and InAlN in KOH solutions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-07

PREAI

Vartuli, CB; Pearton, SJ; Lee, JW; Abernathy, CR; Mackenzie, JD; Zolper, JC; Shul, RJ; Ren, F

Advances in silicon carbide electronics 碳化硅电子学的进展

MRS BULLETIN

IF4.9

2011-01-31

OAAI

Zolper, JC; Skowronski, M

Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

APPLIED PHYSICS LETTERS

IF3.6

1998-07-13

PREAI

Cao, XA; Abernathy, CR; Singh, RK; Pearton, SJ; Fu, M; Sarvepalli, V; Sekhar, JA; Zolper, JC; Rieger, DJ; Han, J; Drummond, TJ; Shul, RJ; Wilson, RG

Annealing of ion implanted gallium nitride

APPLIED PHYSICS LETTERS

IF3.6

1998-03-09

OAAI

Tan, HH; Williams, JS; Zou, J; Cockayne, DJH; Pearton, SJ; Zolper, JC; Stall, RA

Electrical and structural analysis of high-dose Si implantation in GaN

APPLIED PHYSICS LETTERS

IF3.6

1997-05-19

112

PREAI

Zolper, JC; Tan, HH; Williams, JS; Zou, J; Cockayne, DJH; Pearton, SJ; Crawford, MH; Karlicek, RF

Nonalloyed Ti/Al ohmic contacts to n-type GaN using high-temperature premetallization anneal

APPLIED PHYSICS LETTERS

IF3.6

1996-10-28

104

PREAI

Lester, LF; Brown, JM; Ramer, JC; Zhang, L; Hersee, SD; Zolper, JC

Sputtered AlN encapsulant for high-temperature annealing of GaN

APPLIED PHYSICS LETTERS

IF3.6

1996-07-22

PREAI

Zolper, JC; Rieger, DJ; Baca, AG; Pearton, SJ; Lee, JW; Stall, RA

Ion-implanted GaN junction field effect transistor

APPLIED PHYSICS LETTERS

IF3.6

1996-04-15

158

PREAI

Zolper, JC; Shul, RJ; Baca, AG; Wilson, RG; Pearton, SJ; Stall, RA

Hydrogen passivation of Ca acceptors in GaN

APPLIED PHYSICS LETTERS

IF3.6

1996-04-08

PREAI

Lee, JW; Pearton, SJ; Zolper, JC; Stall, RA

Ca and O ion implantation doping of GaN

APPLIED PHYSICS LETTERS

IF3.6

1996-04-01

178

PREAI

Zolper, JC; Wilson, RG; Pearton, SJ; Stall, RA

研究方向