J.P. Xu - Publications, H-index & Citations

J.P. Xu

south china university of technology

15H指数

88论文数

578被引数

收录论文 17

发表时间

Prediction of preeclampsia by evaluating the RI of placental second villi in the third trimester with HR-Flow ultrasound 通过评估第三孕期胎盘二级绒毛的RI值来预测子痫前期（使用HR-Flow超声）

BMC Pregnancy and Childbirth

IF2.7

2025-10-10

OAAI

Ye-Ping He; Jun-Lan Xu; Xiu-Feng Yin; Gang Li; Chao Xue; Yi-Feng Luo; Jian-Feng Guo

Influence of Polyvinylpyrrolidone and Cassava Starch on the Formation Kinetics of CO2 Hydrate 聚乙烯吡咯烷酮和木薯淀粉对CO2水合物形成动力学的影响

ENERGY & FUELS

IF5.3

2025-04-15

PREAI

Li, Nan; Dong, Xucheng; Xu, Jingkai; Liu, Jingchen; Li, Zhi; Huang, Xing; Kan, Jingyu; Sun, Changyu; Chen, Guangjin

Internal and external synergistic CO2 capture of cement-based materials using modified biochar 水泥基材料中改性生物炭的内部和外部协同CO2捕获

CONSTRUCTION AND BUILDING MATERIALS

IF8

2025-04-01

PREAI

Yang, Ziyuan; Xu, Jingkai; Gao, Xiaojian; Qin, Ling

A 0.81-1.46 ppm/°C High-Order Segmented Curvature-Compensation Bandgap Reference with Dynamic Element Matching Offset Cancellation for a Battery Management System 一种具有动态元件匹配失调消除功能的0.81-1.46 ppm/°C高阶分段曲率补偿带隙基准电压源，用于电池管理系统

ELECTRONICS

IF2.6

2025-03-27

OAAI

Xu, Jingkai; Wang, Wei; Lin, Yude; Ramiah, Harikrishnan; Li, Xiaochao

Coordination and planning of offshore wind hydrogen production systems: A case in South Wales

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

IF8.3

2025-03-01

PREAI

Fan, Fulin; Zhou, Jialong; Xu, Jingkai; Nwobu, John; Campos-Gaona, David; Song, Kai

Optimization of NC-LSPR coupled MoS2 phototransistors for high-performance broad-spectrum detection 用于高性能广谱检测的nc-lspr耦合MoS2光电晶体管的优化

NANOPHOTONICS

IF6.6

2024-11-21

OAAI

Jiang, Weichao; Deng, Yuheng; Su, Rui; Xu, Jingping; Liu, Lu

Multifunctional Radio Frequency Device With Integrated Dual-Polarized Antenna, Filters, and Power Combiners for Base-Station Applications

IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS

IF4.8

2024-01-01

PREAI

Xu, Jiageng; Mao, Chunxu; Zhang, Xiu Yin

Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment

APPLIED SURFACE SCIENCE

IF6.9

2019-11-01

PREAI

Huang, Yong; Xu, Jing-Ping; Liu, Lu; Cheng, Zhi-Xiang; Lai, Pui-To; Tang, Wing-Man

Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices

APPLIED SURFACE SCIENCE

IF6.9

2019-02-01

PREAI

Liu, Lu; Cheng, Zhi-Xiang; Xu, Jing-Ping; Huang, Yong; Lai, Pui-To; Tang, Wing-Man

Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content

CHINESE PHYSICS LETTERS

IF4.2

2018-07-17

PREAI

Bin-Xu; Xu, Jing-Ping; Liu, Lu; Su, Yong

Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

APPLIED PHYSICS LETTERS

IF3.6

2016-07-15

PREAI

Cheng, Z. X.; Xu, J. P.; Liu, L.; Huang, Y.; Lai, P. T.; Tang, W. M.

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

APPLIED PHYSICS LETTERS

IF3.6

2015-11-23

PREAI

Liu, L. N.; Choi, H. W.; Xu, J. P.; Lai, P. T.

Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2015-03-26

OAAI

Wang, L. S.; Xu, J. P.; Liu, L.; Lu, H. H.; Lai, P. T.; Tang, W. M.

Improved performances of metal-oxide-nitride-oxide-silicon memory with HfTiON as charge-trapping layer

APPLIED PHYSICS LETTERS

IF3.6

2013-11-22

OAAI

Chen, J. X.; Xu, J. P.; Liu, L.; Lai, P. T.

Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films

APPLIED PHYSICS LETTERS

IF3.6

2011-09-14

OAAI

Huang, X. D.; Liu, L.; Xu, J. P.; Lai, P. T.

Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer

APPLIED PHYSICS LETTERS

IF3.6

2011-05-02

PREAI

Ji, F.; Xu, J. P.; Liu, J. G.; Li, C. X.; Lai, P. T.

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

APPLIED PHYSICS LETTERS

IF3.6

2010-07-13

PREAI

Xu, H. X.; Xu, J. P.; Li, C. X.; Lai, P. T.

研究方向