On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensorSENSORS AND ACTUATORS B-CHEMICALIF7.72009-06-017PREAI
Hydrogen sensing properties of a metamorphic high electron mobility transistorAPPLIED PHYSICS LETTERSIF3.62009-01-068PREAI
Transient response of a transistor-based hydrogen sensor基于晶体管的氢传感器的瞬态响应SENSORS AND ACTUATORS B-CHEMICALIF7.72008-09-0111PREAI
Comprehensive study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen sensorSENSORS AND ACTUATORS B-CHEMICALIF7.72008-07-014PREAI
Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensorSENSORS AND ACTUATORS B-CHEMICALIF7.72008-01-0114PREAI
Effect of nonannealed ohmic-recess structure on temperature-dependent characteristics of metamorphic high-electron-mobility transistorsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32008-01-013OAAI
Hydrogen-induced effect on device performance of a Pd/GaAs-based heterostructure field-effect transistorJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32008-01-012PREAI
Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structureJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32008-01-010PREAI
On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambianceSENSORS AND ACTUATORS B-CHEMICALIF7.72007-07-0130PREAI
Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistorAPPLIED PHYSICS LETTERSIF3.62007-06-186PREAI
A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor schottky diodeJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32007-01-016PREAI
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistorsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32007-01-015OAAI
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