Akihiro Wakahara - Publications, H-index & Citations

Akihiro Wakahara

hamamatsu photonics

29H指数

388论文数

3.9K被引数

收录论文 31

发表时间

Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

OPTICAL MATERIALS

IF4.2

2024-03-01

PREAI

Pavelescu, E. -M.; Ticos, D.; Ligor, O.; Romanitan, C.; Matei, A.; Comanescu, F.; Tucureanu, V.; Spanulescu, S. I.; Ticos, C.; Ohshima, T.; Nakamura, T.; Imaizumi, M.; Goldman, R. S.; Wakahara, A.; Yamane, K.

Crystal-field analysis and models of Eu-emission centers with C3v symmetry in in situ Eu- and Mg-codoping GaN layers

JOURNAL OF LUMINESCENCE

IF3.6

2023-10-01

PREAI

Yamaga, Mitsuo; O'Donnell, Kevin P.; Sekiguchi, Hiroto; Wakahara, Akihiro

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

APPLIED PHYSICS LETTERS

IF3.6

2020-10-07

PREAI

Pavelescu, E. -M.; Ligor, O.; Occena, J.; Ticos, C.; Matei, A.; Gavrila, R. L.; Yamane, K.; Wakahara, A.; Goldman, R. S.

Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2016-10-11

PREAI

Sekiguchi, Hiroto; Sakai, Masaru; Kamada, Takuho; Tateishi, Hiroki; Syouji, Atsushi; Wakahara, Akihiro

Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

JOURNAL OF LUMINESCENCE

IF3.6

2015-10-01

PREAI

Kanemoto, Masayoshi; Sekiguchi, Hiroto; Yamane, Keisuke; Okada, Hiroshi; Wakahara, Akihiro

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

JOURNAL OF LUMINESCENCE

IF3.6

2012-12-01

PREAI

Wakahara, Akihiro; Sekiguchi, Hiroto; Okada, Hiroshi; Takagi, Yasufumi

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2011-10-24

OAAI

Takagi, Yasufumi; Suwa, Takanobu; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2011-03-25

PREAI

Ishikawa, F.; Fuyuno, S.; Higashi, K.; Kondow, M.; Machida, M.; Oji, H.; Son, J. -Y.; Trampert, A.; Umeno, K.; Furukawa, Y.; Wakahara, A.

Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

PHYSICAL REVIEW B

IF3.7

2010-03-31

OAAI

Dagnelund, D.; Vorona, I. P.; Vlasenko, L. S.; Wang, X. J.; Utsumi, A.; Furukawa, Y.; Wakahara, A.; Yonezu, H.; Buyanova, I. A.; Chen, W. M.

Epitaxial growth of Sc-doped ZnO films on Si by sol-gel route

APPLIED SURFACE SCIENCE

IF6.9

2009-03-01

PREAI

Sharma, Ruchika; Sehrawat, Kiran; Wakahara, Akihiro; Mehra, R. M.

Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2008-05-01

PREAI

Dagnelund, D.; Wang, X. J.; Vorona, I. P.; Buyanova, I. A.; Chen, W. M.; Utsumi, A.; Furukawa, Y.; Moon, S.; Wakahara, A.; Yonezu, H.

Photoluminescence and absorption in sol-gel-derived ZnO films

JOURNAL OF LUMINESCENCE

IF3.6

2007-10-01

201

PREAI

Sagar, Parmod; Shishodia, P. K.; Mehra, R. M.; Okada, H.; Wakahara, Akihiro; Yoshida, Akira

Plasma enhanced chemical vapor deposition of ZnO thin films 等离子体增强化学气相沉积ZnO薄膜

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2006-07-01

PREAI

Shishodia, P. K.; Kim, H. J.; Wakahara, A.; Yoshida, A.; Shishodia, G.; Mehra, R. M.

Electrical properties of n-type GaPN grown by molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-04-06

PREAI

Furukawa, Y; Yonezu, H; Wakahara, A; Yoshizumi, Y; Morita, Y; Sato, A

Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-03-06

PREAI

Dagnelund, D; Buyanova, IA; Mchedlidze, T; Chen, WM; Utsumi, A; Furukawa, Y; Wakahara, A; Yonezu, H

Study of electron irradiation-induced defects in CuInSe2 and CuInxGa1-xSe2 by electron spin resonance

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2006-01-01

PREAI

Okada, H; Lee, HS; Wakahara, A; Yoshida, A; Ohshima, T; Kamiya, T

Structural and photoelectrochernical characteristics of nanocrystalline ZnO electrode with Eosin-Y

CERAMICS INTERNATIONAL

IF5.6

2006-01-01

PREAI

Lee, Woo-Jin; Okada, Hiroshi; Wakahara, Akihiro; Yoshida, Akira

Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

IF4.9

2005-11-01

354

PREAI

Tanaka, T; Nagatomo, T; Kawasaki, D; Nishio, M; Guo, QX; Wakahara, A; Yoshida, A; Ogawa, H

Elemental devices, circuits and processes for a monolithic Si/III-V-N alloy OEIC

OPTICAL MATERIALS

IF4.2

2005-02-01

PREAI

Yonezu, H; Furukawa, Y; Abe, H; Yoshikawa, Y; Moon, SY; Utsunu, A; Yoshizumi, Y; Wakahara, A; Ohtani, M

Decreasing of CaZrO3 sintering temperature with glass fritaddition

CERAMICS INTERNATIONAL

IF5.6

2005-01-01

PREAI

Lee, WJ; Wakahara, A; Kim, BH

研究方向