Hideki Matsumura

Mechanism and control of crack generation in glass substrates during crystallization of a-Si Films by flash lamp annealing

IF3.6

2019-04-04

PREAI

Cong Thanh Nguyen; Ohdaira, Keisuke; Matsumura, Hideki

Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon

IF3.5

2012-09-01

PREAI

Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Sawada, Keisuke; Matsumura, Hideki

Drastic reduction in surface recombination velocity of crystalline silicon by surface treatment using catalytically-generated radicals 通过使用催化产生的自由基进行表面处理，晶体硅的表面复合速度急剧降低

IF6.3

2012-05-01

PREAI

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

IF6.3

2011-02-01

PREAI

Matsumura, Hideki; Miyamoto, Motoharu; Koyama, Koichi; Ohdaira, Keisuke

Antireflection subwavelength structure of silicon surface formed by wet process using catalysis of single nano-sized gold particle

IF3.6

2010-08-26

PREAI

Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

Electrical characterization of carbon nanotube field-effect transistors with SiNx passivation films deposited by catalytic chemical vapor deposition

IF6.3

2008-08-01

PREAI

Nishioka, Kensuke; Horita, Susumu; Ohdaira, Keisuke; Matsumura, Hideki

Investigation of surface treatment effect of catalyst on the lifetime for Cat-CVD method

IF3.6

2008-05-09

PREAI

Maehashi, Kenzo; Ohno, Yasuhide; Inoue, Koichi; Matsumoto, Kazuhiko; Niki, Toshikazu; Matsumura, Hideki

Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition -: art. no. 113115

IF3.5

2008-05-01

PREAI

Honda, Kazuhiro; Ohdaira, Keisuke; Matsumura, Hideki

Deoxyribonucleic acid sensing device with 40-nm-gap-electrodes fabricated by low-cost conventional techniques

IF3.6

2005-03-11

PREAI

Kaminishi, D; Ozaki, H; Ohno, Y; Maehashi, K; Inoue, K; Matsumoto, K; Seri, Y; Masuda, A; Matsumura, H

Catalytic decomposition of HCN on heated W surfaces to produce CN radicals

IF3.6

2004-07-26

PREAI

Hashioka, S; Saito, M; Tamiya, E; Matsumura, H

Cat-CVD (hot-wire CVD): how different from PECVD in preparing amorphous silicon

IF3.5

2004-06-01

PREAI

Umemoto, H; Morimoto, T; Yamawaki, M; Masuda, Y; Masuda, A; Matsumura, H

Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors

IF3.5

2004-06-01

PREAI

Matsumura, H; Umemoto, H; Masuda, A

VACUUM

IF3.9

2004-06-01

PREAI

Masuda, A; Totsuka, M; Oku, T; Hattori, R; Matsumura, H

In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells

What is the difference between catalytic CVD and plasma-enhanced CVD? - Gas-phase kinetics and film properties

IF6.3

2002-10-01

PREAI

Masuda, A; Ishibashi, Y; Uchida, K; Kamesaki, K; Izumi, A; Matsumura, H

VACUUM

IF3.9

2002-08-01

PREAI

Masuda, A; Izumi, A; Umemoto, H; Matsumura, H

Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD

Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition 决定通过催化化学气相沉积制备的氢化非晶硅膜中悬空键密度的主要参数

IF3.5

2002-04-01

PREAI

Umemoto, H; Nozaki, Y; Kitazoe, M; Horii, K; Ohara, K; Morita, D; Uchida, K; Ishibashi, Y; Komoda, M; Kamesaki, K; Izumi, A; Masuda, A; Matsumura, H

Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: application to preparation of Er-doped hydrogenated amorphous Si films

IF6.3

2001-02-01

PREAI

Masuda, A; Niikura, C; Ishibashi, Y; Matsumura, H

VACUUM

IF3.9

2000-11-01

PREAI

Masuda, A; Sakai, J; Matsumura, H

Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation

IF3.6

2000-10-23

PREAI

Sato, H; Izumi, A; Matsumura, H