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J

J. E. Epler

fraunhofer germany

21H指数
104论文数
2.0K被引数
收录论文 6
发表时间
Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter
err2020-09-01
err7
PREAI
errHofstetter, Daniel; Beck, Hans; Epler, John E.; Kirste, Lutz; Bour, David P.
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Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes
err2006-12-13
err75
PREAI
errZhou, L.; Epler, J. E.; Krames, M. R.; Goetz, W.; Gherasimova, M.; Ren, Z.; Han, J.; Kneissl, M.; Johnson, N. M.
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High performance thin-film flip-chip InGaN-GaN light-emitting diodes
err2006-08-16
err501
PREAI
errShchekin, O. B.; Epler, J. E.; Trottier, T. A.; Margalith, T.; Steigerwald, D. A.; Holcomb, M. O.; Martin, P. S.; Krames, M. R.
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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
err2004-05-10
err426
PREAI
errWierer, JJ; Krames, MR; Epler, JE; Gardner, NF; Craford, MG; Wendt, JR; Simmons, JA; Sigalas, MM
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The application of quantum well solar cells to thermophotovoltaics
err1998-01-01
err18
PREAI
errGriffin, P; Ballard, I; Barnham, K; Nelson, J; Zachariou, A; Epler, J; Hill, G; Button, C; Pate, M
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