G. A. Rozgonyi - Publications, H-index & Citations

G. A. Rozgonyi

North Carolina State University

36H指数

333论文数

4.4K被引数

收录论文 29

发表时间

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

OAAI

Brown, RA; Kononchuk, O; Bondarenko, I; Romanowski, A; Radzimski, Z; Rozgonyi, GA; Gonzalez, F

Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Ono, T; Asayama, E; Horie, H; Hourai, M; Sueoka, K; Tsuya, H; Rozgonyi, GA

Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Ono, T; Romanowski, A; Asayama, E; Horie, H; Sueoka, K; Tsuya, H; Rozgonyi, GA

Bias dependent contrast mechanisms in EBIC images of MOS capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Kirk, HR; Radzimski, Z; Romanowski, A; Rozgonyi, GA

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Beaman, KL; Kononchuk, O; Koveshnikov, S; Osburn, CM; Rozgonyi, GA

Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Ono, T; Rozgonyi, GA; Au, C; Messina, T; Goodall, RK; Huff, HR

Fracture Strength of Photovoltaic Silicon Wafers Evaluated Using a Controlled Flaw Method

ADVANCED ENGINEERING MATERIALS

IF3.3

2013-04-25

PREAI

Shi, Meirong; Youssef, Khaled; Rozgonyi, George A.

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

APPLIED PHYSICS LETTERS

IF3.6

2012-11-27

PREAI

Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2012-01-01

PREAI

Kulshreshtha, Prashant K.; Youssef, Khaled M.; Rozgonyi, George

Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (110)/(100) grain boundary

SCRIPTA MATERIALIA

IF5.6

2011-04-01

PREAI

Yu, Xuegong; Li, Xiaoqiang; Lei, Dong; Yang, Deren; Rozgonyi, George

Oxygen Precipitation Related Stress-Modified Crack Propagation in High Growth Rate Czochralski Silicon Wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-01

OAAI

Kulshreshtha, P. K.; Yoon, YoHan; Youssef, K. M.; Good, E. A.; Rozgonyi, G.

Effect of nickel contamination on grain boundary states at a direct silicon bonded (110)/(100) interface

SCRIPTA MATERIALIA

IF5.6

2010-11-01

PREAI

Li, Xiaoqiang; Yu, Xuegong; Song, Lihui; Yang, Deren; Rozgonyi, George

Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias

APPLIED PHYSICS LETTERS

IF3.6

2010-05-27

PREAI

Yu, Xuegong; Song, Lihui; Yang, Deren; Kittler, Martin; Rozgonyi, George A.

Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces

APPLIED PHYSICS LETTERS

IF3.6

2007-03-12

PREAI

Wagener, M. C.; Zhang, R. H.; Rozgonyi, G. A.; Seacrist, M.; Ries, M.

A new understanding of near-threshold damage for 200 keV irradiation in silicon

JOURNAL OF MATERIALS SCIENCE

IF3.9

2005-07-01

PREAI

Stoddard, N; Duscher, G; Windl, W; Rozgonyi, G

Electrical, structural, and chemical analysis of defects in epitaxial SiGe-based heterostructures

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2005-01-01

PREAI

Bray, KR; Zhao, W; Kordas, L; Wise, R; Robinson, M; Rozgonyi, G

Oxygen precipitate denuded zone in polycrystalline sheet silicon

APPLIED PHYSICS LETTERS

IF3.6

2004-08-16

OAAI

Lu, JG; Rozgonyi, G; Rand, J; Jonczyk, R

Umbrella-like precipitates in nitrogen-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS

IF3.6

2004-03-15

PREAI

Kvit, A; Karoui, A; Duscher, G; Rozgonyi, GA

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

APPLIED PHYSICS LETTERS

IF3.6

2003-08-18

PREAI

Kvit, A; Yankov, RA; Duscher, G; Rozgonyi, G; Glasko, JM

Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2003-01-01

PREAI

Karoui, A; Karoui, FS; Rozgonyi, GA; Hourai, M; Sueoka, K

研究方向