未登录

T

Teruaki Motooka

kyushu university

H指数:26

被引数:2,765

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

APPLIED PHYSICS LETTERS

IF3.6

2016-09-0977

PREAI

Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

APPLIED PHYSICS LETTERS

IF3.6

2014-04-0120

PREAI

Formation of silicon nanodots from dysprosium-doped amorphous SiCxOy films grown by hot-filament assisted chemical vapor deposition of CH3SiH3 and Dy(DPM)3 gas jets

APPLIED SURFACE SCIENCE

IF6.9

2007-08-011

PREAI

Interatomic potential for Si-O systems using Tersoff parameterization

使用Tersoff参数化的si-o系统的原子间势

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2007-04-01472

PREAI

Molecular dynamics study of velocity distribution and local temperature change during rapid cooling processes in excimer-laser-annealed silicon

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2006-09-0114

PREAI

Generation of glass SiO2 structures by various cooling rates:: A molecular-dynamics study

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2006-09-0133

PREAI

Luminescence from Nd- and Dy-ion-implanted 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2006-05-087

PREAI

Influence of oxygen partial pressure on thickness change of buried oxide in silicon-on-insulator structure during high-temperature oxidation processes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-014

PREAI

Plasmon effects on infrared spectra of GaN nanocolumns

APPLIED PHYSICS LETTERS

IF3.6

2005-06-203

PREAI

Atomic diffusion at solid/liquid interface of silicon: Transition layer and defect formation

PHYSICAL REVIEW B

IF3.7

2002-02-0620

PREAI

Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes

PHYSICAL REVIEW B

IF3.7

2001-10-3014

PREAI

Empirical potential description of energetics and thermodynamic properties in expanded-volume silicon clathrates

PHYSICAL REVIEW B

IF3.7

2001-10-2543

PREAI

Reply to Comment on 'Molecular dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms'

PHYSICAL REVIEW B

IF3.7

2001-05-113

PREAI

Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

APPLIED PHYSICS LETTERS

IF3.6

2000-12-252

OAAI

Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers

APPLIED SURFACE SCIENCE

IF6.9

2000-06-011

PREAI

Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms

PHYSICAL REVIEW B

IF3.7

2000-03-1567

PREAI

Growth of Si/3C-SiC/Si(100) heterostructures by pulsed supersonic free jets

APPLIED PHYSICS LETTERS

IF3.6

1999-12-2048

PREAI

Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt

PHYSICAL REVIEW B

IF3.7

1998-11-1531

PREAI

Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study

PHYSICAL REVIEW B

IF3.7

1997-12-15142

PREAI

Recrystallization of MeV Si implanted 6H-SiC

APPLIED PHYSICS LETTERS

IF3.6

1996-12-0236

PREAI