K. Saarinen - Publications, H-index & Citations

K. Saarinen

机构信息待补充

43H指数

267论文数

6.8K被引数

收录论文 43

发表时间

Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films

APPLIED PHYSICS LETTERS

IF3.6

2007-04-11

OAAI

Slotte, J.; Tuomisto, F.; Saarinen, K.; Moe, C. G.; Keller, S.; DenBaars, S. P.

Clustering of vacancy defects in high-purity semi-insulating SiC

PHYSICAL REVIEW B

IF3.7

2007-02-13

OAAI

Aavikko, R.; Saarinen, K.; Tuomisto, F.; Magnusson, B.; Son, N. T.; Janzen, E.

Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon

PHYSICAL REVIEW B

IF3.7

2007-01-24

OAAI

Kuitunen, K.; Saarinen, K.; Tuomisto, F.

Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2006-08-28

OAAI

Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M.; Hageman, P. R.; Larsen, P. K.; Nordlund, A.

APPLIED PHYSICS LETTERS

IF3.6

2006-08-07

PREAI

Slotte, J.; Saarinen, K.; Pavelescu, E. -M.; Hakkarainen, T.; Pessa, M.

Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-07-06

OAAI

Pelli, A.; Saarinen, K.; Tuomisto, F.; Ruffenach, S.; Briot, O.

Formation of VP-Zn complexes in bulk InP(Zn) by migration of P vacancies from the (110) surface

PHYSICAL REVIEW B

IF3.7

2006-05-25

PREAI

Slotte, J.; Saarinen, K.; Ebert, Ph.

Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

PHYSICAL REVIEW B

IF3.7

2006-05-03

PREAI

Hautakangas, S.; Makkonen, I.; Ranki, V.; Puska, J.; Saarinen, K.; Xu, X.; Look, D. C.

Vacancy-impurity pairs in relaxed Si1-xGex layers studied by positron annihilation spectroscopy -: art. no. 165209

PHYSICAL REVIEW B

IF3.7

2006-04-14

PREAI

Rummukainen, M; Slotte, J; Saarinen, K; Radamson, HH; Hållstedt, J; Kuznetsov, AY

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-04-04

OAAI

Paskova, T; Hommel, D; Paskov, PP; Darakchieva, V; Monemar, B; Bockowski, M; Suski, T; Grzegory, I; Tuomisto, F; Saarinen, K; Ashkenov, N; Schubert, M

Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy

PHYSICAL REVIEW B

IF3.7

2005-10-03

PREAI

Hautakangas, S; Saarinen, K; Liszkay, L; Freitas, JA; Henry, RL

Introduction and recovery of point defects in electron-irradiated ZnO

PHYSICAL REVIEW B

IF3.7

2005-08-03

328

OAAI

Tuomisto, F; Saarinen, K; Look, DC; Farlow, GC

Investigation of the structural and optical properties of free-standing GaN grown by HVPE

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2005-07-01

PREAI

Gogova, D; Hemmingsson, C; Monemar, B; Talik, E; Kruczek, M; Tuomisto, F; Saarinen, K

Zinc vacancies in the heteroepitaxy of ZnO on sapphire:: Influence of the substrate orientation and layer thickness -: art. no. 042103

APPLIED PHYSICS LETTERS

IF3.6

2005-01-24

OAAI

Zubiaga, A; Tuomisto, F; Plazaola, F; Saarinen, K; Garcia, JA; Rommeluere, JF; Zuñiga-Pérez, J; Muñoz-Sanjosé, V

Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry

APPLIED PHYSICS LETTERS

IF3.6

2004-06-14

PREAI

Rummukainen, M; Oila, J; Laakso, A; Saarinen, K; Ptak, AJ; Myers, TH

Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2004-03-01

PREAI

Oila, J; Kemppinen, A; Laakso, A; Saarinen, K; Egger, W; Liszkay, L; Sperr, P; Lu, H; Schaff, WJ

Vacancy-phosphorus complexes in strained Si1-xGex:: Structure and stability -: art. no. 115307

PHYSICAL REVIEW B

IF3.7

2003-09-15

PREAI

Sihto, SL; Slotte, J; Lento, J; Saarinen, K; Monakhov, EV; Kuznetsov, AY; Svensson, BG

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy (vol 82, pg 3433, 2003)

APPLIED PHYSICS LETTERS

IF3.6

2003-06-23

OAAI

Oila, J; Kivioja, J; Ranki, V; Saarinen, K; Look, DC; Molnar, RJ; Park, SS; Lee, SK; Han, JY

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2003-05-19

126

PREAI

Oila, J; Kivioja, J; Ranki, V; Saarinen, K; Look, DC; Molnar, RJ; Park, SS; Lee, SK; Han, JY

Contributions from gallium vacancies and carbon-related defects to the yellow luminescence in GaN

APPLIED PHYSICS LETTERS

IF3.6

2003-05-19

194

PREAI

Armitage, R; Hong, W; Yang, Q; Feick, H; Gebauer, J; Weber, ER; Hautakangas, S; Saarinen, K

研究方向