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P

P. Hautojärvi

机构信息待补充

49H指数
253论文数
8.7K被引数
收录论文 19
发表时间
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Formation of vacancy-impurity complexes in heavily Zn-doped InP -: art. no. 115209
errPHYSICAL REVIEW B
IF3.7
err2003-03-26
err23
PREAI
errSlotte, J; Saarinen, K; Salmi, A; Simula, S; Aavikko, R; Hautojärvi, P
err分享
err收藏
Optical transitions of the silicon vacancy in 6H-SiC studied by positron annihilation spectroscopy -: art. no. 075206
errPHYSICAL REVIEW B
IF3.7
err2002-08-19
err39
PREAI
errArpiainen, S; Saarinen, K; Hautojärvi, P; Henry, L; Barthe, MF; Corbel, C
err分享
err收藏
Adsorption of HgCl2 molecules on Au(111) surfaces studied by scanning tunneling microscopy
errJOURNAL OF CHEMICAL PHYSICS
IF3.1
err2001-08-22
err2
PREAI
errLaakso, A; Lahtinen, J; Levlin, M; Hautojärvi, P
err分享
err收藏
Positron thermalization in Si and GaAs
errPHYSICAL REVIEW B
IF3.7
err2001-04-03
err4
PREAI
errNissilä, J; Saarinen, K; Hautojärvi, P
err分享
err收藏
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers -: art. no. 045205
errPHYSICAL REVIEW B
IF3.7
err2001-01-09
err111
PREAI
errOila, J; Ranki, V; Kivioja, J; Saarinen, K; Hautojärvi, P; Likonen, J; Baranowski, JM; Pakula, K; Suski, T; Leszczynski, M; Grzegory, I
err分享
err收藏
Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures
errPHYSICAL REVIEW B
IF3.7
err2000-12-15
err22
PREAI
errBarthe, MF; Henry, L; Corbel, C; Blondiaux, G; Saarinen, K; Hautojärvi, P; Hugonnard, E; Di Cioccio, L; Letertre, F; Ghyselen, B
err分享
err收藏
Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation
errPHYSICAL REVIEW B
IF3.7
err2000-12-15
err5
PREAI
errDesgardin, P; Oila, J; Saarinen, K; Hautojärvi, P; Tournié, E; Faurie, JP; Corbel, C
err分享
err收藏
The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-10-18
err78
PREAI
errSaarinen, K; Nissilä, J; Hautojärvi, P; Likonen, J; Suski, T; Grzegory, I; Lucznik, B; Porowski, S
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Sample illumination facility for slow positron beam studies and its application to the photoionization cross-section of the DX center in AlxGa1-xAs
errAPPLIED SURFACE SCIENCE
IF6.9
err1999-08-01
err0
PREAI
errOila, J; Laine, T; Nissilä, J; Fallström, K; Saarinen, K; Hautojäarvi, P
err分享
err收藏
Experimental identification of the doping deactivation mechanism in semiconductors:: Application to nitrogen in ZnS0.06Se0.94
errPHYSICAL REVIEW B
IF3.7
err1999-05-15
err8
PREAI
errOila, J; Saarinen, K; Laine, T; Hautojärvi, P; Uusimaa, P; Pessa, M; Likonen, J
err分享
err收藏
Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
errPHYSICAL REVIEW B
IF3.7
err1998-07-15
err95
PREAI
errCalleja, E; Sanchez-Garcia, MA; Basak, D; Sanchez, FJ; Calle, F; Youinou, P; Munoz, E; Serrano, JJ; Blanco, JM; Villar, C; Laine, T; Oila, J; Saarinen, K; Hautojarvi, P; Molloy, CH; Somerford, DJ; Harrison, I
err分享
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Photoionization of the silicon divacancy studied by positron-annihilation spectroscopy
errPHYSICAL REVIEW B
IF3.7
err1998-05-15
err36
PREAI
errKauppinen, H; Corbel, C; Nissila, J; Saarinen, K; Hautojarvi, P
err分享
err收藏
Observation of Ga vacancies in silicon delta-doping superlattices in (001) GaAs
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-09-29
err8
PREAI
errLaine, T; Saarinen, K; Makinen, J; Hautojarvi, P; Corbel, C; Ashwin, MJ; Newman, RC
err分享
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Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-05-19
err5
errOAAI
errLiszkay, L; Corbel, C; Hautojarvi, P; Aulombard, R; Cloitre, T; Griesche, J; Kiessling, F
err分享
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Evaporation of gold thin films on mica: Effect of evaporation parameters
errAPPLIED SURFACE SCIENCE
IF6.9
err1997-05-01
err48
PREAI
errLevlin, M; Laakso, A; Niemi, HEM; Hautojarvi, P
err分享
err收藏
Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons
errPHYSICAL REVIEW B
IF3.7
err1997-04-15
err49
PREAI
errKauppinen, H; Corbel, C; Skog, K; Saarinen, K; Laine, T; Hautojarvi, P; Desgardin, P; Ntsoenzok, E
err分享
err收藏
Observation of compensating Ga vacancies in highly Si-doped GaAs
errPHYSICAL REVIEW B
IF3.7
err1996-10-15
err48
PREAI
errLaine, T; Saarinen, K; Makinen, J; Hautojarvi, P; Corbel, C; Pfeiffer, LN; Citrin, PH
err分享
err收藏
Theoretical and experimental study of positron annihilation with core electrons in solids
errPHYSICAL REVIEW B
IF3.7
err1996-07-15
err266
errOAAI
errAlatalo, M; Barbiellini, B; Hakala, M; Kauppinen, H; Korhonen, T; Puska, MJ; Saarinen, K; Hautojarvi, P; Nieminen, RM
err分享
err收藏
Vacancylike structure of the DX center in Te-doped AlxGa1-xAs
errPHYSICAL REVIEW B
IF3.7
err1996-04-15
err5
PREAI
errLaine, T; Makinen, J; Saarinen, K; Hautojarvi, P; Corbel, C; Fille, ML; Gibart, P
err分享
err收藏

研究方向

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合作学者
合作期刊
L
L. N. Pfeiffer
H 指数: 121 · 论文数: 2.2K
R
R. M. Nieminen
H 指数: 81 · 论文数: 650
M
M. J. Puska
H 指数: 64 · 论文数: 279
I
I. Grzegory
H 指数: 55 · 论文数: 535
S
S. Porowski
H 指数: 54 · 论文数: 467
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