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Olivier Dehaese

centre national de la recherche scientifique (cnrs)

23H指数
176论文数
1.5K被引数
收录论文 27
发表时间
23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers
err2013-11-15
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errOAAI
errKlaime, K.; Calo, C.; Piron, R.; Paranthoen, C.; Thiam, D.; Batte, T.; Dehaese, O.; Le Pouliquen, J.; Loualiche, S.; Le Corre, A.; Merghem, K.; Martinez, A.; Ramdane, A.
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Photonics based on carbon nanotubes
err2013-06-26
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errGu, Qingyuan; Gicquel-Guezo, Maud; Loualiche, Slimane; Le Pouliquen, Julie; Batte, Thomas; Folliot, Herve; Dehaese, Olivier; Grillot, Frederic; Battie, Yann; Loiseau, Annick; Liang, Baolai; Huffaker, Diana
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Enhancement of the polarization stability of a 1.55 μm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes
err2012-07-11
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errGauthier, J. -P.; Paranthoen, C.; Levallois, C.; Shuaib, A.; Lamy, J. -M.; Folliot, H.; Perrin, M.; Dehaese, O.; Chevalier, N.; Durand, O.; Le Corre, A.
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Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
err2011-06-22
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PREAI
errRobert, C.; Bondi, A.; Thanh, T. Nguyen; Even, J.; Cornet, C.; Durand, O.; Burin, J. P.; Jancu, J. M.; Guo, W.; Letoublon, A.; Folliot, H.; Boyer-Richard, S.; Perrin, M.; Chevalier, N.; Dehaese, O.; Tavernier, K.; Loualiche, S.; Le Corre, A.
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Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)
err2009-07-10
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PREAI
errLamy, J. M.; Paranthoen, C.; Levallois, C.; Nakkar, A.; Folliot, H.; Gauthier, J. P.; Dehaese, O.; Le Corre, A.; Loualiche, S.
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Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique
err2009-02-24
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PREAI
errZhou, D.; Piron, R.; Dontabactouny, M.; Dehaese, O.; Grillot, F.; Batte, T.; Tavernier, K.; Even, J.; Loualiche, S.
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Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 μm工作在1.55微米的基于量子点和基于量子Dash的半导体激光器的光学反馈公差
err2009-01-01
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PREAI
errAzouigui, Sheherazade; Dagens, Beatrice; Lelarge, Francois; Provost, Jean-Guy; Make, Dalila; Le Gouezigou, Odile; Accard, Alain; Martinez, Anthony; Merghem, Kamel; Grillot, Frederic; Dehaese, Olivier; Piron, Rozenn; Loualiche, Slimane; Zou, Qin; Ramdane, Abderrahim
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Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate
err2008-10-20
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PREAI
errZhou, D.; Piron, R.; Grillot, F.; Dehaese, O.; Homeyer, E.; Dontabactouny, M.; Batte, T.; Tavernier, K.; Even, J.; Loualiche, S.
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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD
err2008-07-31
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errPedesseau, L.; Even, J.; Bondi, A.; Guo, W.; Richard, S.; Folliot, H.; Labbe, C.; Cornet, C.; Dehaese, O.; Le Corre, A.; Durand, O.; Loualiche, S.
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Dynamic properties of InAs/InP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 μm
err2008-07-14
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errMartinez, A.; Merghem, K.; Bouchoule, S.; Moreau, G.; Ramdane, A.; Provost, J. -G.; Alexandre, F.; Grillot, F.; Dehaese, O.; Piron, R.; Loualiche, S.
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Carrier relaxation dynamics in InAs/InP quantum dots
err2008-05-13
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errMiska, P.; Even, J.; Dehaese, O.; Marie, X.
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Temperature and pressure dependence of the recombination processes in 1.5 μm InAs/InP (311)B quantum dot lasers
err2007-09-27
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errMasse, N. F.; Homeyer, E.; Marko, I. P.; Adams, A. R.; Sweeney, S. J.; Dehaese, O.; Piron, R.; Grillot, F.; Loualiche, S.
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Long-wavelength vertical-cavity surface-emitting laser using an electro-optic index modulator with 10 nm tuning range
err2006-07-05
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errLevallois, C.; Caillaud, B.; de Bougrenet de la Tocnaye, J. -L.; Dupont, L.; Le Corre, A.; Folliot, H.; Dehaese, O.; Loualiche, S.
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Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation
err2006-04-26
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PREAI
errCornet, C; Labbé, C; Folliot, H; Caroff, P; Levallois, C; Dehaese, O; Even, J; Le Corre, A; Loualiche, S
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Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx bragg reflectors
err2006-03-01
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errLevallois, C; Le Corre, A; Dehaese, O; Paranthoen, C; Labbé, C; Loualiche, S
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Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
err2006-03-01
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errVeselinov, K; Grillot, F; Miska, P; Homeyer, E; Caroff, P; Platz, C; Even, J; Marie, X; Dehaese, O; Loualiche, S; Ramdane, A
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High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107
err2005-12-06
err122
PREAI
errCaroff, P; Paranthoen, C; Platz, C; Dehaese, O; Folliot, H; Bertru, N; Labbé, C; Piron, R; Homeyer, E; Le Corre, A; Loualiche, S
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Vertical electronic coupling between InAs/InP quantum-dot layers emitting in the near-infrared range -: art. no. 111905
err2005-03-07
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PREAI
errMiska, P; Even, J; Paranthoen, C; Dehaese, O; Jbeli, A; Senès, M; Marie, X
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290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55 μm range
err2004-12-13
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PREAI
errGicquel-Guézo, M; Loualiche, S; Even, J; Labbé, C; Dehaese, O; Le Corre, A; Folliot, H; Pellan, Y
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