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收藏An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region
Hanajiri, T; Aoto, K; Hoshino, T; Niizato, M; Nakajima, Y; Toyabe, T; Morikawa, T; Sugano, T; Akagi, Y
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收藏Current effects on high magnetic field resonances in a dot array
Lin, LH; Aoki, N; Nakao, K; Ochiai, Y; Ge, F; Andresen, A; Prasad, C; Bird, JP; Ferry, DK; Ishibashi, K; Aoyagi, Y; Sugano, T
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收藏Phase-breaking time variations with temperature and current in an open quantum dot array
Prasad, C; Andresen, A; Ge, F; Bird, JP; Ferry, DK; Lin, LH; Aoki, N; Nakao, K; Ochiai, Y; Ishibashi, K; Aoyagi, Y; Sugano, T
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收藏Metal-insulator transition in quantum dot arrays量子点阵列中的金属-绝缘体跃迁
Shailos, A; El Hassan, M; Prasad, C; Bird, JP; Ferry, DK; Lin, LH; Aoki, N; Nakao, K; Ochiai, Y; Ishibashi, K; Aoyagi, Y; Sugano, T
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收藏Evidence for a reentrant metal-insulator transition in quantum-dot arrays
Andresen, A; Prasad, C; Ge, F; Lin, LH; Aoki, N; Nakao, K; Bird, JP; Ferry, DK; Ochiai, Y; Ishibashi, K; Aoyagi, Y; Sugano, T
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