Yoshiji Horíkoshi - Publications, H-index & Citations

Yoshiji Horíkoshi

Waseda University

44H指数

412论文数

7.6K被引数

收录论文 13

发表时间

Operating principle and integration of in-plane gate logic devices

APPLIED PHYSICS LETTERS

IF3.6

2011-12-14

PREAI

Komatsuzaki, Y.; Saba, K.; Onomitsu, K.; Yamaguchi, H.; Horikoshi, Y.

Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2008-02-12

OAAI

Xu, Zhangcheng; Zhang, Yating; Tackeuchi, Atsushi; Horikoshi, Yoshiji; Hvam, Jorn M.

Transparent RuOx contacts on n-ZnO

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

PREAI

Lin, T. K.; Chang, S. J.; Huang, B. R.; Lam, K. T.; Sun, Y. S.; Fujita, M.; Horikoshi, Y.

Transport characteristics of electrons in weak short-period two-dimensional potential arrays

APPLIED PHYSICS LETTERS

IF3.6

2001-07-16

PREAI

Kawaharazuka, A; Saku, T; Tokura, Y; Horikoshi, Y; Hirayama, Y

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study 在高过压下通过分子束外延生长的低温GaAs: 反射高能电子衍射研究

APPLIED SURFACE SCIENCE

IF6.9

1998-06-01

PREAI

Shen, A; Ohno, H; Horikoshi, Y; Guo, SP; Ohno, Y; Matsukura, F

Raman scattering studies on Si-doped GaAs grown by hydrogen-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1997-09-29

PREAI

Zhang, JM; Cardona, M; Peng, ZL; Horikoshi, Y

Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure

APPLIED PHYSICS LETTERS

IF3.6

1997-09-15

PREAI

Shen, A; Horikoshi, Y; Ohno, H; Guo, SP

Surface atomic processes during flow-rate modulation epitaxy

APPLIED SURFACE SCIENCE

IF6.9

1997-03-01

PREAI

Horikoshi, Y; Ando, S; Ando, H; Kobayashi, N

Electronic properties of monolayer steps on (2x4)/c(2x8) reconstructed GaAs(001) surfaces

PHYSICAL REVIEW B

IF3.7

1996-08-15

PREAI

Kanisawa, K; Yamaguchi, H; Horikoshi, Y

Electron scattering by steps in a vicinal heterointerface

PHYSICAL REVIEW B

IF3.7

1996-04-15

PREAI

Tokura, Y; Saku, T; Horikoshi, Y

Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells

PHYSICAL REVIEW B

IF3.7

1996-03-15

PREAI

Yamaguchi, H; Kanisawa, K; Horikoshi, Y

Surface-defect formation on heavily doped InAs and GaAs layers studied by scanning tunneling microscopy

PHYSICAL REVIEW B

IF3.7

1996-02-15

PREAI

Yamaguchi, H; Horikoshi, Y

Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular beam epitaxy using in situ scanning electron microscopy

APPLIED PHYSICS LETTERS

IF3.6

1996-01-01

OAAI

Homma, Y; Yamaguchi, H; Horikoshi, Y

研究方向