Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrateAPPLIED PHYSICS LETTERSIF3.62011-03-316OAAI
Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on SiAPPLIED PHYSICS LETTERSIF3.62009-11-136OAAI
Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiCAPPLIED PHYSICS LETTERSIF3.62009-06-2638OAAI
Analytical energy loss distribution for accurate high resolution depth profiling using medium energy ion scatteringAPPLIED PHYSICS LETTERSIF3.62008-04-2510OAAI
Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitorsJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32008-01-012OAAI
Compression mechanism and pressure-induced amorphization of γ-ZrW2O8PHYSICAL REVIEW BIF3.72007-11-0115PREAI
Electrical characteristics and interface structure of HfAlO/SiON/Si(001) stacksAPPLIED PHYSICS LETTERSIF3.62007-03-2212PREAI
Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on SiAPPLIED PHYSICS LETTERSIF3.62006-06-1315OAAI
Room temperature interactions of water vapor with HfO2 films on SiAPPLIED PHYSICS LETTERSIF3.62006-05-1522PREAI
Morphological and compositional changes in the SiO2/SiC interface region induced by oxide thermal growth - art. no. 041901APPLIED PHYSICS LETTERSIF3.62006-01-2341PREAI
Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si -: art. no. 022901APPLIED PHYSICS LETTERSIF3.62005-07-0541OAAI
Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffractionAPPLIED PHYSICS LETTERSIF3.62005-05-1925OAAI
Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profilingAPPLIED PHYSICS LETTERSIF3.62004-11-0815OAAI
Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiCAPPLIED PHYSICS LETTERSIF3.62004-10-1827OAAI
Thermal stability of plasma-nitrided aluminum oxide films on SiAPPLIED PHYSICS LETTERSIF3.62004-01-0512OAAI
Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profilingAPPLIED SURFACE SCIENCEIF6.92003-05-015PREAI
Thermal stability and diffusion in gadolinium silicate gate dielectric filmsAPPLIED PHYSICS LETTERSIF3.62001-10-1521OAAI
Composition, atomic transport, and chemical stability of ZrAlxOy ultrathin films deposited on Si(001)APPLIED PHYSICS LETTERSIF3.62001-09-2421OAAI
Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopiesAPPLIED PHYSICS LETTERSIF3.62001-06-0475OA
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向