R. F. Davis - Publications, H-index & Citations

R. F. Davis

arizona state university-tempe

83H指数

963论文数

2.6W被引数

收录论文 88

发表时间

Thermal stability and phase transformation of α-, κ(ε)-, and γ-Ga2O3 films under different ambient conditions

APPLIED PHYSICS LETTERS

IF3.6

2024-08-29

PREAI

Tang, Jingyu; Jiang, Kunyao; Tseng, Po-Sen; Kurchin, Rachel C.; Porter, Lisa M.; Davis, Robert F.

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

APL MATERIALS

IF4.5

2024-01-12

OAAI

Tang, Jingyu; Jiang, Kunyao; Xu, Chengchao; Cabral, Matthew J.; Xiao, Kelly; Porter, Lisa M.; Davis, Robert F.

Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ-phase spinels

APPLIED PHYSICS LETTERS

IF3.6

2023-07-06

OAAI

Tang, Jingyu; Jiang, Kunyao; House, Stephen D. D.; Xu, Chengchao; Xiao, Kelly; Porter, Lisa M. M.; Davis, Robert F. F.

Chemical vapor cleaning of 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

King, SW; Kern, RS; Benjamin, MC; Barnak, JP; Nemanich, RJ; Davis, RF

Wet chemical processing of (0001)Si 6H-SiC hydrophobic and hydrophilic surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

King, SW; Nemanich, RJ; Davis, RF

Dry ex situ cleaning processes for (0001)Si 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

King, SW; Nemanich, RJ; Davis, RF

Nondiffusive electron transport in metals: A two-temperature Boltzmann transport equation analysis of thermoreflectance experiments

PHYSICAL REVIEW B

IF3.7

2019-02-27

OAAI

Freedman, Justin P.; Davis, Robert F.; Malen, Jonathan A.

Growth and characterization of α-, β- and ε-phases of Ga2O3 using MOCVD and HVPE techniques 使用MOCVD和HVPE技术生长和表征Ga2O3的 α-，β-和 ε-相

MATERIALS RESEARCH LETTERS

IF7.9

2018-03-07

207

OAAI

Yao, Yao; Okur, Serdal; Lyle, Luke A. M.; Tompa, Gary S.; Salagaj, Tom; Sbrockey, Nick; Davis, Robert F.; Porter, Lisa M.

Polymer ligand-induced autonomous sorting and reversible phase separation in binary particle blends

SCIENCE ADVANCES

IF12.5

2016-12-02

OAAI

Schmitt, Michael; Zhang, Jianan; Lee, Jaejun; Lee, Bongjoon; Ning, Xin; Zhang, Ren; Karim, Alamgir; Davis, Robert F.; Matyjaszewski, Krzysztof; Bockstaller, Michael R.

Thermal interface conductance across metal alloy-dielectric interfaces

PHYSICAL REVIEW B

IF3.7

2016-01-21

OAAI

Freedman, Justin P.; Yu, Xiaoxiao; Davis, Robert F.; Gellman, Andrew J.; Malen, Jonathan A.

Substrates and epitaxial deposition processes for Group III-nitride thin films and power device heterostructures

MRS BULLETIN

IF4.9

2015-05-08

PREAI

Davis, Robert F.

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

APPLIED PHYSICS LETTERS

IF3.6

2014-08-27

PREAI

King, Sean W.; Nemanich, Robert J.; Davis, Robert F.

Rugged Electrical Power Switching in Semiconductors: A Systems Approach 半导体中的坚固电源开关: 一种系统方法

PROCEEDINGS OF THE IEEE

IF25.9

2014-01-01

PREAI

Shenai, Krishna; Dudley, Michael; Davis, Robert F.

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

SCIENTIFIC REPORTS

IF3.9

2013-10-16

155

OAAI

Freedman, Justin P.; Leach, Jacob H.; Preble, Edward A.; Sitar, Zlatko; Davis, Robert F.; Malen, Jonathan A.

Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2012-05-16

OAAI

Su, Zonghui; Huang, Li; Liu, Fang; Freedman, Justin P.; Porter, Lisa M.; Davis, Robert F.; Malen, Jonathan A.

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

ACTA MATERIALIA

IF9.3

2010-04-01

PREAI

Reitmeier, Z. J.; Einfeldt, S.; Davis, R. F.; Zhang, Xinyu; Fang, Xialong; Mahajan, S.

Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2009-10-12

PREAI

Kim, Baek Hyun; Davis, Robert F.; Cho, Chang-Hee; Park, Seong-Ju

Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate

APPLIED PHYSICS LETTERS

IF3.6

2009-08-21

OAAI

Kim, Baek Hyun; Davis, Robert F.; Cho, Chang-Hee; Park, Seong-Ju

Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

ACTA MATERIALIA

IF9.3

2009-08-01

PREAI

Reitmeier, Z. J.; Einfeldt, S.; Davis, R. F.; Zhang, Xinyu; Fang, Xialong; Mahajan, S.

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE

IF6.9

2009-04-01

PREAI

Bishop, S. M.; Reynolds, C. L.; Molstad, J. C.; Stevie, F. A.; Barnhardt, D. E.; Davis, R. F.

研究方向