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M
M. Lannoo
centre national de la recherche scientifique (cnrs)
54
H指数
472
论文数
1.5W
被引数
0
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39
发表时间
发表时间
IF
被引数
Theoretical Demonstration of Hot-Carrier Operation in an Ultrathin Solar Cell
PHYSICAL REVIEW APPLIED
IF
4.4
2022-06-01
6
OA
AI
Cavassilas, Nicolas; Makhfudz, Imam; Dare, Anne-Marie; Lannoo, Michel; Dangoisse, Guillaume; Bescond, Marc; Michelini, Fabienne
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Universality of optical absorptance quantization in two-dimensional group-IV, III-V, II-VI, and IV-VI semiconductors
PHYSICAL REVIEW B
IF
3.7
2022-01-19
5
OA
AI
Lannoo, Michel; Prins, P. Tim; Hens, Zeger; Vanmaekelbergh, Daniel; Delerue, Christophe
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Optimized Operation of Quantum-Dot Intermediate-Band Solar Cells Deduced from Electronic Transport Modeling
PHYSICAL REVIEW APPLIED
IF
4.4
2020-04-13
2
OA
AI
Cavassilas, Nicolas; Suchet, Daniel; Delamarre, Amaury; Guillemoles, Jean-Francois; Michelini, Fabienne; Bescond, Marc; Lannoo, Michel
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Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors
MATERIALS
IF
3.2
2019-12-21
5
OA
AI
Lee, Youseung; Logoteta, Demetrio; Cavassilas, Nicolas; Lannoo, Michel; Luisier, Mathieu; Bescond, Marc
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Impact of Electron-Phonon Scattering on Optical Properties of CH3NH3PbI3 Hybrid Perovskite Material
ACS OMEGA
IF
4.3
2019-12-05
19
OA
AI
Galvani, Benoit; Suchet, Daniel; Delamarre, Amaury; Bescond, Marc; Michelini, Fabienne Velia; Lannoo, Michel; Guillemoles, Jean-Francois; Cavassilas, Nicolas
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Insights into the Charge Separation Dynamics in Photoexcited Molecular Junctions
JOURNAL OF PHYSICAL CHEMISTRY C
IF
3.2
2019-11-26
8
PRE
AI
Beltako, K.; Cavassilas, N.; Lannoo, M.; Michelini, F.
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Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors
PHYSICAL REVIEW APPLIED
IF
4.4
2018-12-10
11
OA
AI
Moussavou, Manel; Lannoo, Michel; Cavassilas, Nicolas; Logoteta, Demetrio; Bescond, Marc
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Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cells
JOURNAL OF PHYSICAL CHEMISTRY C
IF
3.2
2018-11-28
15
OA
AI
Cavassilas, Nicolas; Logoteta, Demetrio; Lee, Youseung; Michelini, Fabienne; Lannoo, Michel; Bescond, Marc; Luisier, Mathieu
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Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment
PHYSICAL REVIEW B
IF
3.7
2018-05-31
16
OA
AI
Lee, Y.; Bescond, M.; Logoteta, D.; Cavassilas, N.; Lannoo, M.; Luisier, M.
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Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
PHYSICAL REVIEW B
IF
3.7
2017-05-24
12
OA
AI
Lee, Y.; Bescond, M.; Cavassilas, N.; Logoteta, D.; Raymond, L.; Lannoo, M.; Luisier, M.
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Efficient quantum modeling of inelastic interactions in nanodevices
PHYSICAL REVIEW B
IF
3.7
2016-05-06
19
OA
AI
Lee, Y.; Lannoo, M.; Cavassilas, N.; Luisier, M.; Bescond, M.
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Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
APPLIED PHYSICS LETTERS
IF
3.6
2015-10-16
5
OA
AI
Berrada, Salim; Bescond, Marc; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel
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Nanoscale device modeling using a conserving analytic continuation technique
PHYSICAL REVIEW B
IF
3.7
2013-08-30
17
PRE
AI
Mera, H.; Lannoo, M.; Cavassilas, N.; Bescond, M.
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One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors
APPLIED PHYSICS LETTERS
IF
3.6
2013-01-07
19
PRE
AI
Cavassilas, Nicolas; Bescond, Marc; Mera, Hector; Lannoo, Michel
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Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation
PHYSICAL REVIEW B
IF
3.7
2012-10-12
32
OA
AI
Mera, H.; Lannoo, M.; Li, C.; Cavassilas, N.; Bescond, M.
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Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
APPLIED PHYSICS LETTERS
IF
3.6
2011-08-26
11
PRE
AI
Pons, Nicolas; Cavassilas, Nicolas; Raymond, Laurent; Michelini, Fabienne; Lannoo, Michel; Bescond, Marc
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Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors
APPLIED PHYSICS LETTERS
IF
3.6
2010-12-21
9
PRE
AI
Li, Changsheng; Bescond, Marc; Lannoo, Michel
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GW investigation of interface-induced correlation effects on transport properties in realistic nanoscale structures
PHYSICAL REVIEW B
IF
3.7
2009-11-19
12
PRE
AI
Li, Changsheng; Bescond, M.; Lannoo, M.
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Improved effective mass theory for silicon nanostructures
APPLIED PHYSICS LETTERS
IF
3.6
2008-09-04
13
PRE
AI
Nehari, K.; Lannoo, M.; Michelini, F.; Cavassilas, N.; Bescond, M.; Autran, J. L.
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Full-band study of current across silicon nanowire transistors
APPLIED PHYSICS LETTERS
IF
3.6
2007-03-28
43
OA
AI
Nehari, K.; Cavassilas, N.; Michelini, F.; Bescond, M.; Autran, J. L.; Lannoo, M.
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研究方向
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合作学者
合作期刊
D
Daniël Vanmaekelbergh
H 指数: 79 · 论文数: 396
Z
Zeger Hens
H 指数: 75 · 论文数: 668
T
Thierry Gacoin
H 指数: 61 · 论文数: 363
C
Christophe Delerue
H 指数: 59 · 论文数: 438
G
G. Allan
H 指数: 58 · 论文数: 401
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