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M. Lannoo

centre national de la recherche scientifique (cnrs)

54H指数
472论文数
1.5W被引数
收录论文 39
发表时间
Theoretical Demonstration of Hot-Carrier Operation in an Ultrathin Solar Cell
err2022-06-01
err6
errOAAI
errCavassilas, Nicolas; Makhfudz, Imam; Dare, Anne-Marie; Lannoo, Michel; Dangoisse, Guillaume; Bescond, Marc; Michelini, Fabienne
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Universality of optical absorptance quantization in two-dimensional group-IV, III-V, II-VI, and IV-VI semiconductors
err2022-01-19
err5
errOAAI
errLannoo, Michel; Prins, P. Tim; Hens, Zeger; Vanmaekelbergh, Daniel; Delerue, Christophe
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Optimized Operation of Quantum-Dot Intermediate-Band Solar Cells Deduced from Electronic Transport Modeling
err2020-04-13
err2
errOAAI
errCavassilas, Nicolas; Suchet, Daniel; Delamarre, Amaury; Guillemoles, Jean-Francois; Michelini, Fabienne; Bescond, Marc; Lannoo, Michel
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Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors
err2019-12-21
err5
errOAAI
errLee, Youseung; Logoteta, Demetrio; Cavassilas, Nicolas; Lannoo, Michel; Luisier, Mathieu; Bescond, Marc
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Impact of Electron-Phonon Scattering on Optical Properties of CH3NH3PbI3 Hybrid Perovskite Material
err2019-12-05
err19
errOAAI
errGalvani, Benoit; Suchet, Daniel; Delamarre, Amaury; Bescond, Marc; Michelini, Fabienne Velia; Lannoo, Michel; Guillemoles, Jean-Francois; Cavassilas, Nicolas
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Insights into the Charge Separation Dynamics in Photoexcited Molecular Junctions
err2019-11-26
err8
PREAI
errBeltako, K.; Cavassilas, N.; Lannoo, M.; Michelini, F.
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Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors
err2018-12-10
err11
errOAAI
errMoussavou, Manel; Lannoo, Michel; Cavassilas, Nicolas; Logoteta, Demetrio; Bescond, Marc
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Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cells
err2018-11-28
err15
errOAAI
errCavassilas, Nicolas; Logoteta, Demetrio; Lee, Youseung; Michelini, Fabienne; Lannoo, Michel; Bescond, Marc; Luisier, Mathieu
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Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment
err2018-05-31
err16
errOAAI
errLee, Y.; Bescond, M.; Logoteta, D.; Cavassilas, N.; Lannoo, M.; Luisier, M.
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Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
err2017-05-24
err12
errOAAI
errLee, Y.; Bescond, M.; Cavassilas, N.; Logoteta, D.; Raymond, L.; Lannoo, M.; Luisier, M.
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Efficient quantum modeling of inelastic interactions in nanodevices
err2016-05-06
err19
errOAAI
errLee, Y.; Lannoo, M.; Cavassilas, N.; Luisier, M.; Bescond, M.
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Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
err2015-10-16
err5
errOAAI
errBerrada, Salim; Bescond, Marc; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel
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Nanoscale device modeling using a conserving analytic continuation technique
err2013-08-30
err17
PREAI
errMera, H.; Lannoo, M.; Cavassilas, N.; Bescond, M.
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Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation
err2012-10-12
err32
errOAAI
errMera, H.; Lannoo, M.; Li, C.; Cavassilas, N.; Bescond, M.
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Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
err2011-08-26
err11
PREAI
errPons, Nicolas; Cavassilas, Nicolas; Raymond, Laurent; Michelini, Fabienne; Lannoo, Michel; Bescond, Marc
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Improved effective mass theory for silicon nanostructures
err2008-09-04
err13
PREAI
errNehari, K.; Lannoo, M.; Michelini, F.; Cavassilas, N.; Bescond, M.; Autran, J. L.
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Full-band study of current across silicon nanowire transistors
err2007-03-28
err43
errOAAI
errNehari, K.; Cavassilas, N.; Michelini, F.; Bescond, M.; Autran, J. L.; Lannoo, M.
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