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S
Subhasis Haldar
university of delhi
27
H指数
161
论文数
2.4K
被引数
0
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8
发表时间
发表时间
IF
被引数
Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2017-11-01
6
PRE
AI
Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.
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Analytical modeling simulation and characterization of short channel Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET for improved analog/RF performance
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2016-12-01
14
PRE
AI
Trivedi, Nitin; Kumar, Manoj; Haldar, Subhasis; Deswal, S. S.; Gupta, Mridula; Gupta, R. S.
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Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2016-02-01
24
PRE
AI
Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.
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Numerical modeling of Subthreshold region of junctionless double surrounding gate MOSFET (JLDSG)
无结双环绕栅MOSFET (JLDSG) 亚阈值区的数值模拟
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2016-02-01
51
PRE
AI
Rewari, Sonam; Haldar, Subhasis; Nath, Vandana; Deswal, S. S.; Gupta, R. S.
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Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2015-12-01
14
PRE
AI
Verma, Jay Hind Kumar; Haldar, Subhasis; Gupta, R. S.; Gupta, Mridula
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Capacitance modeling of gate material engineered cylindrical/surrounded gate MOSFETs for sensor applications
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2015-12-01
3
PRE
AI
Verma, Jay Hind Kumar; Pratap, Yogesh; Haldar, Subhasis; Gupta, R. S.; Gupta, Mridula
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Modeling and analysis of fully strained and partially relaxed lattice mismatched AlGaN/GaN HEMT for high temperature applications
高温应用中全应变和部分弛豫晶格失配AlGaN/GaN HEMT的建模与分析
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2008-12-01
11
PRE
AI
Gangwani, Parvesh; Kaur, Ravneet; Pandey, Sujata; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.
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Temperature and aluminium composition dependent sheet carrier concentration at AlGaAs/GaAs interface
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
1999-12-22
8
PRE
AI
Sen, S; Pandey, MK; Haldar, S; Gupta, RS
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H 指数: 37 · 论文数: 475
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H 指数: 25 · 论文数: 92
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Ravneet Kaur
H 指数: 22 · 论文数: 146
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H 指数: 19 · 论文数: 95
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