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B

B. V. Shanabrook

机构信息待补充

44H指数
245论文数
7.7K被引数
收录论文 26
发表时间
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Mobility enhancement in strained p-InGaSb quantum wells
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-07-25
err102
PREAI
errBennett, Brian R.; Ancona, Mario G.; Brad Boos, J.; Shanabrook, Benjamin V.
err分享
err收藏
Determination of conduction band offsets in type-II In0.27Ga0.73Sb/InxAl1-xAsySb1-y heterostructures grown by molecular beam epitaxy
errPHYSICAL REVIEW B
IF3.7
err2006-12-05
err5
PREAI
errGlaser, E. R.; Magno, R.; Shanabrook, B. V.; Tischler, J. G.
err分享
err收藏
Lifetime-limiting defects in n- 4H-SiC epilayers -: art. no. 052110
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-02-01
err207
PREAI
errKlein, PB; Shanabrook, BV; Huh, SW; Polyakov, AY; Skowronski, M; Sumakeris, JJ; O'Loughlin, MJ
err分享
err收藏
Effect of Al/N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-01-05
err14
PREAI
errZhou, L; Smith, DJ; Storm, DF; Katzer, DS; Binari, SC; Shanabrook, BV
err分享
err收藏
Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-01-31
err9
PREAI
errGlaser, ER; Shanabrook, BV; Carlos, WE
err分享
err收藏
Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-10-25
err29
PREAI
errStorm, DF; Katzer, DS; Binari, SC; Shanabrook, BV; Zhou, L; Smith, DJ
err分享
err收藏
Comment on Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
errPHYSICAL REVIEW B
IF3.7
err2004-04-15
err5
PREAI
errFreitas, JA; Moore, WJ; Shanabrook, BV
err分享
err收藏
Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers
errPHYSICAL REVIEW B
IF3.7
err2003-11-07
err38
PREAI
errGlaser, ER; Freitas, JA; Shanabrook, BV; Koleske, DD; Lee, SK; Park, SS; Han, JY
err分享
err收藏
Donor-related recombination processes in hydride-vapor-phase epitaxial GaN
errPHYSICAL REVIEW B
IF3.7
err2002-12-30
err89
PREAI
errFreitas, JA; Moore, WJ; Shanabrook, BV; Braga, GCB; Lee, SK; Park, SS; Han, JY
err分享
err收藏
Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-11-11
err42
PREAI
errStorm, DF; Katzer, DS; Binari, SC; Glaser, ER; Shanabrook, BV; Roussos, JA
err分享
err收藏
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
errPHYSICAL REVIEW B
IF3.7
err2002-02-05
err77
PREAI
errGlaser, ER; Carlos, WE; Braga, GCB; Freitas, JA; Moore, WJ; Shanabrook, BV; Henry, RL; Wickenden, AE; Koleske, DD; Obloh, H; Kozodoy, P; DenBaars, SP; Mishra, UK
err分享
err收藏
Stoichiometry-induced roughness on antimonide growth surfaces
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-04-23
err11
PREAI
errBracker, AS; Nosho, BZ; Barvosa-Carter, W; Whitman, LJ; Bennett, BR; Shanabrook, BV; Culbertson, JC
err分享
err收藏
Effects of surface reconstruction on III-V semiconductor interface formation: The role of III/V composition
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-03-22
err42
PREAI
errNosho, BZ; Weinberg, WH; Barvosa-Carter, W; Bennett, BR; Shanabrook, BV; Whitman, LJ
err分享
err收藏
High-temperature continuous-wave 3-6.1 μm W'' lasers with diamond-pressure-bond heat sinking
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-02-22
err102
PREAI
errBewley, WW; Felix, CL; Vurgaftman, I; Stokes, DW; Aifer, EH; Olafsen, LJ; Meyer, JR; Yang, MJ; Shanabrook, BV; Lee, H; Martinelli, RU; Sugg, AR
err分享
err收藏
Strong emission from As monolayers in AlSb
errPHYSICAL REVIEW B
IF3.7
err1999-01-15
err13
PREAI
errGlaser, ER; Kennedy, TA; Bennett, BR; Shanabrook, BV
err分享
err收藏
Above-room-temperature optically pumped midinfrared W lasers
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-12-28
err76
PREAI
errBewley, WW; Felix, CL; Aifer, EH; Vurgaftman, I; Olafsen, LJ; Meyer, JR; Lee, H; Martinelli, RU; Connolly, JC; Sugg, AR; Olsen, GH; Yang, MJ; Bennett, BR; Shanabrook, BV
err分享
err收藏
Auger coefficients in type-II InAs/Ga1-xInxSb quantum wells
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-11-16
err144
PREAI
errMeyer, JR; Felix, CL; Bewley, WW; Vurgaftman, I; Aifer, EH; Olafsen, LJ; Lindle, JR; Hoffman, CA; Yang, MJ; Bennett, BR; Shanabrook, BV; Lee, H; Lin, CH; Pei, SS; Miles, RH
err分享
err收藏
Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-03-09
err32
PREAI
errBennett, BR; Yang, MJ; Shanabrook, BV; Boos, JB; Park, D
err分享
err收藏
Influence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs(001)
errPHYSICAL REVIEW B
IF3.7
err1997-10-01
err204
PREAI
errKneedler, EM; Jonker, BT; Thibado, PM; Wagner, RJ; Shanabrook, BV; Whitman, LJ
err分享
err收藏
Hybrid hall effect device
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-08-18
err228
PREAI
errJohnson, M; Bennett, BR; Yang, MJ; Miller, MM; Shanabrook, BV
err分享
err收藏

研究方向

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Steven P. DenBaars
H 指数: 126 · 论文数: 1.5K
U
Umesh K. Mishra
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D
David J. Smith
H 指数: 87 · 论文数: 2.3K
W
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L
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