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T

T. S. Arun Samuel

national engineering college

16H指数
101论文数
781被引数
收录论文 5
发表时间
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Analysis and performance improvement of short channel effects in MoSe2/WSe2 heterostructure MOSFETs短沟道效应在MoSe2/WSe2异质结构MOSFETs中的分析与性能提升
errMicro and Nanostructures
IF3
err2025-08-23
err0
PREAI
errU. Malu; J. Charles Pravin; B. Veerasamy; T.S. Arun Samuel
err分享
err收藏
Ultra-sensitive heterojunction double gate BioTFET device for SARS-CoV-2 biomolecules detection超敏异质结双栅BioTFET器件用于SARS-CoV-2生物分子检测
errSCIENTIFIC REPORTS
IF3.9
err2025-04-30
err0
errOAAI
errVimala, P.; Geege, A. Sharon; Mohankumar, N.; Samuel, T. S. Arun; Kumar, T. Ananth; Dhanaselvam, P. Suveetha; Anand, I. Vivek
err分享
err收藏
Performance evaluation of gate engineered InAs-Si heterojunction surrounding gate TFET栅工程inas-si异质结环绕栅TFET的性能评价
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2022-02-01
err5
PREAI
errSathishkumar, M.; Samuel, T. S. Arun; Ramkumar, K.; Anand, I. Vivek; Rahi, S. B.
err分享
err收藏
Performance analysis of triple material tri gate TFET using 3D analytical modelling and TCAD simulation
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2019-10-01
err16
PREAI
errKomalavalli, S.; Samuel, T. S. Arun; Vimala, P.
err分享
err收藏
A new 2 D mathematical modeling of surrounding gate triple material tunnel FET using halo engineering for enhanced drain current
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2019-02-01
err15
PREAI
errVanitha, P.; Samuel, T. S. Arun; Nirmal, D.
err分享
err收藏

研究方向

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合作学者
合作期刊
D
D. Nirmal
H 指数: 32 · 论文数: 199
K
K. Ramkumar
H 指数: 22 · 论文数: 127
N
N. Mohankumar
H 指数: 19 · 论文数: 148
T
T. Ananth Kumar
H 指数: 18 · 论文数: 196
P
P. V. Vanitha
H 指数: 15 · 论文数: 52
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