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W. W. Rühle

Philipps University Marburg

36H指数
255论文数
4.4K被引数
收录论文 32
发表时间
Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution
err2010-03-12
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errOAAI
errSchwalm, M.; Lange, C.; Ruehle, W. W.; Stolz, W.; Volz, K.; Chatterjee, S.
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Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x:H identified by time-resolved photoluminescence
err2008-06-01
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errOAAI
errHantke, K.; Horst, S.; Chatterjee, S.; Klar, P. J.; Volz, K.; Stolz, W.; Ruehle, W. W.; Masia, F.; Pettinari, G.; Polimeni, A.; Capizzi, M.
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The variable stripe-length method revisited:: Improved analysis
err2007-11-06
err32
errOAAI
errLange, C.; Schwalm, M.; Chatterjee, S.; Ruehle, W. W.; Gerhardt, N. C.; Johnson, S. R.; Wang, J. -B.; Zhang, Y. -H.
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Transient gain spectroscopy of (GaIn)As quantum wells:: Experiment and microscopic analysis
err2007-06-18
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PREAI
errLange, C.; Chatterjee, S.; Schlichenmaier, C.; Thraehardt, A.; Koch, S. W.; Ruehle, W. W.; Hader, J.; Moloney, J. V.; Khitrova, G.; Gibbs, H. M.
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Dynamic behavior of 1040 nm semiconductor disk lasers on a nanosecond time scale
err2007-06-11
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PREAI
errDiehl, W.; Brick, P.; Chatterjee, S.; Horst, S.; Hantke, K.; Ruehle, W. W.; Stolz, W.; Thraenhardt, A.; Koch, S. W.
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Lasing in optically pumped Ga(NAsP)/GaP heterostructures
err2006-07-17
err27
PREAI
errBorck, S.; Chatterjee, S.; Kunert, B.; Volz, K.; Stolz, W.; Heber, J.; Ruehle, W. W.; Gerhardt, N. C.; Hofmann, M. R.
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Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
err2006-06-06
err78
PREAI
errRubel, O.; Baranovskii, S. D.; Hantke, K.; Kunert, B.; Ruehle, W. W.; Thomas, P.; Volz, K.; Stolz, W.
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Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells -: art. no. 252111
err2005-12-15
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PREAI
errHantke, K; Heber, JD; Chatterjee, S; Klar, PJ; Volz, K; Stolz, W; Rühle, WW; Polimeni, A; Capizzi, M
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Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures -: art. no. 165320
err2005-04-20
err21
PREAI
errHantke, K; Heber, JD; Schlichenmaier, C; Thränhardt, A; Meier, T; Kunert, B; Volz, K; Stolz, W; Koch, SW; Rühle, WW
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Spin flip from dark to bright states in InP quantum dots -: art. no. 115329
err2004-09-28
err14
errOAAI
errSnoke, DW; Hübner, J; Rühle, WW; Zundel, M
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1-GHz-repetition-rate femtosecond optical parametric oscillator
err2002-03-18
err27
errOAAI
errZhang, XP; Hebling, J; Bartels, A; Nau, D; Kuhl, J; Rühle, WW; Giessen, H
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Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
err2001-05-14
err69
PREAI
errHofmann, M; Wagner, A; Ellmers, C; Schlichenmeier, C; Schäfer, S; Höhnsdorf, F; Koch, J; Stolz, W; Koch, SW; Rühle, WW; Hader, J; Moloney, JV; O'Reilly, EP; Borchert, B; Egorov, AY; Riechert, H
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(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
err2000-01-17
err53
PREAI
errWagner, A; Ellmers, C; Höhnsdorf, F; Koch, J; Agert, C; Leu, S; Hofmann, M; Stolz, W; Rühle, WW
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Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
err1999-06-01
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PREAI
errKaraiskaj, D; Maxisch, T; Ellmers, C; Kolbe, HJ; Weiser, G; Rettig, R; Leu, S; Stolz, W; Hofmann, M; Jahnke, F; Koch, SW; Rühle, WW
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Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
err1999-04-19
err81
PREAI
errEllmers, C; Höhnsdorf, F; Koch, J; Agert, C; Leu, S; Karaiskaj, D; Hofmann, M; Stolz, W; Rühle, WW
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Ultrafast nonlinear subwavelength solid immersion spectroscopy at T = 8 K
err1999-03-29
err36
PREAI
errVollmer, M; Giessen, H; Stolz, W; Rühle, WW; Ghislain, L; Elings, V
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Cooling dynamics of excitons in GaN
err1999-03-15
err20
PREAI
errHägele, D; Zimmermann, R; Oestreich, M; Hofmann, MR; Rühle, WW; Meyer, BK; Amano, H; Akasaki, I
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Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
err1999-03-08
err19
errOAAI
errEllmers, C; Hofmann, MR; Karaiskaj, D; Leu, S; Stolz, W; Rühle, WW; Hilpert, M
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