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收藏Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x:H identified by time-resolved photoluminescence
Hantke, K.; Horst, S.; Chatterjee, S.; Klar, P. J.; Volz, K.; Stolz, W.; Ruehle, W. W.; Masia, F.; Pettinari, G.; Polimeni, A.; Capizzi, M.
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收藏Transient gain spectroscopy of (GaIn)As quantum wells:: Experiment and microscopic analysis
Lange, C.; Chatterjee, S.; Schlichenmaier, C.; Thraehardt, A.; Koch, S. W.; Ruehle, W. W.; Hader, J.; Moloney, J. V.; Khitrova, G.; Gibbs, H. M.
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收藏Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures -: art. no. 165320
Hantke, K; Heber, JD; Schlichenmaier, C; Thränhardt, A; Meier, T; Kunert, B; Volz, K; Stolz, W; Koch, SW; Rühle, WW
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收藏Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
Hofmann, M; Wagner, A; Ellmers, C; Schlichenmeier, C; Schäfer, S; Höhnsdorf, F; Koch, J; Stolz, W; Koch, SW; Rühle, WW; Hader, J; Moloney, JV; O'Reilly, EP; Borchert, B; Egorov, AY; Riechert, H
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收藏Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
Karaiskaj, D; Maxisch, T; Ellmers, C; Kolbe, HJ; Weiser, G; Rettig, R; Leu, S; Stolz, W; Hofmann, M; Jahnke, F; Koch, SW; Rühle, WW
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