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Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission Huang, J. Y. T.; Mawst, L. J.; Kuech, T. F.; Song, X.; Babcock, S. E.; Kim, C. S.; Vurgaftman, I.; Meyer, J. R.; Holmes, A. L., Jr. 分享 收藏
Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy Oye, Michael M.; Mattord, Terry J.; Hallock, Gary A.; Bank, Seth R.; Wistey, Mark A.; Reifsnider, Jason M.; Ptak, Aaron J.; Yuen, Homan B.; Harris, James S., Jr.; Holmes, Archie L., Jr. 分享 收藏
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Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Oye, MM; Wistey, MA; Reifsnider, JM; Agarwal, S; Mattord, TJ; Govindaraju, S; Hallock, GA; Holmes, AL; Bank, SR; Yuen, HB; Harris, JS 分享 收藏
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InGaAs/InAlAs avalanche photodiode with undepleted absorber Li, N; Sidhu, R; Li, XW; Ma, F; Zheng, XG; Wang, SL; Karve, G; Demiguel, S; Holmes, AL; Campbell, JC 分享 收藏
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