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H. Overhof

机构信息待补充

32H指数
197论文数
3.7K被引数
收录论文 15
发表时间
Silicon vacancy annealing and DI luminescence in 6H-SiC -: art. no. 245204
err2004-12-08
err39
PREAI
errPinheiro, MVB; Rauls, E; Gerstmann, U; Greulich-Weber, S; Overhof, H; Spaeth, JM
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Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure -: art. no. 233201
err2004-12-06
err15
errOAAI
errHartmann, T; Ye, S; Klar, PJ; Heimbrodt, W; Lampalzer, M; Stolz, W; Kurz, T; Loidl, A; von Nidda, HAK; Wolverson, D; Davies, JJ; Overhof, H
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Annealing of vacancy-related defects in semi-insulating SiC
err2004-11-16
err29
PREAI
errGerstmann, U; Rauls, E; Overhof, H
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Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations
err2003-07-16
err2
PREAI
errVoss, S; Stolwijk, NA; Bracht, H; Larsen, AN; Overhof, H
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Formation and annealing of nitrogen-related complexes in SiC
err2003-05-06
err78
PREAI
errGerstmann, U; Rauls, E; Frauenheim, T; Overhof, H
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Understanding the negative vacancy in silicon without configuration interaction theory
err2002-04-18
err13
PREAI
errGerstmann, U; Rauls, E; Overhof, H; Frauenheim, T
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Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair -: art. no. 245212
err2001-12-07
err106
errOAAI
errLingner, T; Greulich-Weber, S; Spaeth, JM; Gerstmann, U; Rauls, E; Hajnal, Z; Frauenheim, T; Overhof, H
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The spin state of the neutral silicon vacancy in 3C-SiC
err1999-10-04
err46
PREAI
errDeák, P; Miró, J; Gali, A; Udvardi, L; Overhof, H
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Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment
err1997-09-15
err190
PREAI
errWimbauer, T; Meyer, BK; Hofstatter, A; Scharmann, A; Overhof, H
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