A. Botchkarev - Publications, H-index & Citations

A. Botchkarev

机构信息待补充

44H指数

165论文数

6.2K被引数

收录论文 32

发表时间

Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells:: Impact on the optical spectra

PHYSICAL REVIEW B

IF3.7

2000-01-15

191

OAAI

Cingolani, R; Botchkarev, A; Tang, H; Morkoc, H; Traetta, G; Coli, G; Lomascolo, M; Di Carlo, A; Della Sala, F; Lugli, P

Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers

PHYSICAL REVIEW B

IF3.7

1999-12-15

PREAI

Bairamov, BH; Gürdal, O; Botchkarev, A; Morkoç, H; Irmer, G; Monecke, J

Formation mechanism and relative stability of the {11(2)over-bar-0} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides

PHYSICAL REVIEW B

IF3.7

1999-06-15

PREAI

Ruterana, P; Barbaray, B; Béré, A; Vermaut, P; Hairie, A; Paumier, E; Nouet, G; Salvador, A; Botchkarev, A; Morkoç, H

Piezoelectric effects on the optical properties of GaN/AlxGa1-xN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

1998-12-07

119

OAAI

Kim, HS; Lin, JY; Jiang, HX; Chow, WW; Botchkarev, A; Morkoç, H

Plasma heating in highly excited GaN/AlGaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

1998-10-26

OAAI

Zeng, KC; Mair, R; Lin, JY; Jiang, HX; Chow, WW; Botchkarev, A; Morkoc, H

Deep centers in n-GaN grown by reactive molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1998-05-04

150

OAAI

Fang, ZQ; Look, DC; Kim, W; Fan, Z; Botchkarev, A; Morkoc, H

Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN

APPLIED PHYSICS LETTERS

IF3.6

1998-04-27

112

PREAI

Tsen, KT; Ferry, DK; Botchkarev, A; Sverdlov, B; Salvador, A; Morkoc, H

Optical modes within III-nitride multiple quantum well microdisk cavities

APPLIED PHYSICS LETTERS

IF3.6

1998-03-30

PREAI

Mair, RA; Zeng, KC; Lin, JY; Jiang, HX; Zhang, B; Dai, L; Botchkarev, A; Kim, W; Morkoc, H; Khan, MA

Deep level defects in n-type GaN grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1998-03-09

124

PREAI

Wang, CD; Yu, LS; Lau, SS; Yu, ET; Kim, W; Botchkarev, AE; Morkoc, H

Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates

APPLIED PHYSICS LETTERS

IF3.6

1997-12-08

PREAI

Popovici, G; Kim, W; Botchkarev, A; Tang, HP; Morkoc, H; Solomon, J

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

APPLIED PHYSICS LETTERS

IF3.6

1997-11-24

PREAI

Hamdani, F; Botchkarev, AE; Tang, H; Kim, W; Morkoc, H

Optical properties of GaN/AlGaN multiple quantum well microdisks

APPLIED PHYSICS LETTERS

IF3.6

1997-11-17

OAAI

Mair, RA; Zeng, KC; Lin, JY; Jiang, HX; Zhang, B; Dai, L; Tang, H; Botchkarev, A; Kim, W; Morkoc, H

Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

APPLIED PHYSICS LETTERS

IF3.6

1997-09-29

PREAI

Tsen, KT; Ferry, DK; Botchkarev, A; Sverdlov, B; Salvador, A; Morkoc, H

Optical properties of GaN/AlxGa1-xN quantum wells

PHYSICAL REVIEW B

IF3.7

1997-07-15

PREAI

Cingolani, R; Coli, G; Rinaldi, R; Calcagnile, L; Tang, H; Botchkarev, A; Kim, W; Salvador, A; Morkoc, H

Surface morphology and optical characterization of GaN grown on alpha-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1997-06-02

PREAI

Yeadon, M; Hamdani, F; Xu, GY; Salvador, A; Botchkarev, AE; Gibson, JM; Morkoc, H

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

1997-05-26

PREAI

Smith, M; Lin, JY; Jiang, HX; Khan, A; Chen, Q; Salvador, A; Botchkarev, A; Kim, W; Morkoc, H

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1997-01-27

110

PREAI

Hamdani, F; Botchkarev, A; Kim, W; Morkoc, H; Yeadon, M; Gibson, JM; Tsen, SCY; Smith, DJ; Evans, K; Litton, CW; Mitchel, WC; Hemenger, P

High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

1996-12-16

183

PREAI

Aktas, O; Fan, ZF; Mohammad, SN; Botchkarev, AE; Morkoc, H

Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

APPLIED PHYSICS LETTERS

IF3.6

1996-10-28

PREAI

Salvador, A; Kim, W; Aktas, O; Botchkarev, A; Fan, Z; Morkoc, H

Optical transitions in GaN/AlxGa1-xN multiple quantum wells grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1996-10-21

PREAI

Smith, M; Lin, JY; Jiang, HX; Salvador, A; Botchkarev, A; Kim, W; Morkoc, H

研究方向