R. Averbeck - Publications, H-index & Citations

R. Averbeck

infineon technologies

20H指数

56论文数

1.9K被引数

收录论文 11

发表时间

Strain relaxation dependent island nucleation rates during the Stranski-Krastanow growth of GaN on AlN by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2008-12-15

PREAI

Koblmueller, G.; Averbeck, R.; Riechert, H.; Hyun, Y. -J.; Pongratz, P.

Axial and radial growth of Ni-induced GaN nanowires

APPLIED PHYSICS LETTERS

IF3.6

2007-08-29

PREAI

Geelhaar, L.; Cheze, C.; Weber, W. M.; Averbeck, R.; Riechert, H.; Kehagias, Th.; Komninou, Ph.; Dimitrakopulos, G. P.; Karakostas, Th.

Annealing of InGaAsN quantum wells in hydrogen

APPLIED PHYSICS LETTERS

IF3.6

2007-02-15

PREAI

Geelhaar, L.; Galluppi, M.; Averbeck, R.; Jaschke, G.; Riechert, H.

Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2006-01-03

PREAI

Geelhaar, L; Galluppi, M; Jaschke, G; Averbeck, R; Riechert, H; Remmele, T; Albrecht, M; Dworzak, M; Hildebrant, R; Hoffmann, A

Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001)GaN -: art. no. 041908

APPLIED PHYSICS LETTERS

IF3.6

2005-01-24

PREAI

Koblmüller, G; Brown, J; Averbeck, R; Riechert, H; Pongratz, P; Speck, JS

Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and (000(1)over-bar) surfaces -: art. no. 035325

PHYSICAL REVIEW B

IF3.7

2004-01-28

103

PREAI

Koblmüller, G; Averbeck, R; Riechert, H; Pongratz, P

Delayed nucleation during molecular-beam epitaxial growth of GaN observed by line-of-sight quadrupole mass spectrometry

APPLIED PHYSICS LETTERS

IF3.6

2002-04-01

PREAI

Koblmüller, G; Pongratz, P; Averbeck, R; Riechert, H

Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses

APPLIED PHYSICS LETTERS

IF3.6

2001-12-24

PREAI

Keckes, J; Gerlach, JW; Averbeck, R; Riechert, H; Bader, S; Hahn, B; Lugauer, HJ; Lell, A; Härle, V; Wenzel, A; Rauschenbach, B

Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations

APPLIED PHYSICS LETTERS

IF3.6

2000-04-10

PREAI

Kaczmarczyk, G; Kaschner, A; Reich, S; Hoffmann, A; Thomsen, C; As, DJ; Lima, AP; Schikora, D; Lischka, K; Averbeck, R; Riechert, H

Determination of the chemical composition of distorted InGaN GaN heterostructures from x-ray diffraction data

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

1999-01-01

141

PREAI

Schuster, M; Gervais, PO; Jobst, B; Hösler, W; Averbeck, R; Riechert, H; Iberl, A; Stömmer, R

Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate

APPLIED PHYSICS LETTERS

IF3.6

1998-01-19

PREAI

Jiang, DS; Ramsteiner, M; Ploog, KH; Tews, H; Graber, A; Averbeck, R; Riechert, H

研究方向