M. Shatalov - Publications, H-index & Citations

M. Shatalov

us army research laboratory (arl)

40H指数

155论文数

4.3K被引数

收录论文 37

发表时间

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-03-10

PREAI

Podlipskas, Z.; Aleksiejunas, R.; Kadys, A.; Mickevicius, J.; Jurkevicius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-06-12

PREAI

Mickevicius, J.; Jurkevicius, J.; Kadys, A.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

AlGaN devices and growth of device structures

JOURNAL OF MATERIALS SCIENCE

IF3.9

2015-02-24

PREAI

Jones, K. A.; Chow, T. P.; Wraback, M.; Shatalov, M.; Sitar, Z.; Shahedipour, F.; Udwary, K.; Tompa, G. S.

High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2014-12-17

PREAI

Marcinkevicius, S.; Jain, R.; Shatalov, M.; Yang, J.; Shur, M.; Gaska, R.

Correlation between carrier localization and efficiency droop in AlGaN epilayers

APPLIED PHYSICS LETTERS

IF3.6

2013-07-03

PREAI

Mickevicius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

Internal quantum efficiency in AlGaN with strong carrier localization

APPLIED PHYSICS LETTERS

IF3.6

2012-11-21

PREAI

Mickevicius, J.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2012-07-23

PREAI

Mickevicius, J.; Jurkevicius, J.; Kazlauskas, K.; Zukauskas, A.; Tamulaitis, G.; Shur, M. S.; Shatalov, M.; Yang, J.; Gaska, R.

Photoexcited carrier dynamics in AlInN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2012-06-12

OAAI

Liuolia, V.; Marcinkevicius, S.; Billingsley, D.; Shatalov, M.; Yang, J.; Gaska, R.; Shur, M. S.

Stimulated emission in AlGaN/AlGaN quantum wells with different Al content

APPLIED PHYSICS LETTERS

IF3.6

2012-02-21

PREAI

Mickevicius, J.; Jurkevicius, J.; Kazlauskas, K.; Zukauskas, A.; Tamulaitis, G.; Shur, M. S.; Shatalov, M.; Yang, J.; Gaska, R.

Confocal spectroscopy of InGaN LED structures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-03-16

OAAI

Dobrovolskas, D.; Mickevicius, J.; Kuokstis, E.; Tamulaitis, G.; Shur, M.; Shatalov, M.; Yang, J.; Gaska, R.

Current-induced degradation of high performance deep ultraviolet light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2010-05-27

PREAI

Moe, Craig G.; Reed, Meredith L.; Garrett, Gregory A.; Sampath, Anand V.; Alexander, Troy; Shen, Hongen; Wraback, Michael; Bilenko, Yuriy; Shatalov, Maxim; Yang, Jinwei; Sun, Wenhong; Deng, Jianyu; Gaska, Remis

Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

APPLIED PHYSICS LETTERS

IF3.6

2010-02-09

116

PREAI

Sun, W.; Shatalov, M.; Deng, J.; Hu, X.; Yang, J.; Lunev, A.; Bilenko, Y.; Shur, M.; Gaska, R.

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2009-11-06

PREAI

Pinos, A.; Marcinkevicius, S.; Yang, J.; Bilenko, Y.; Shatalov, M.; Gaska, R.; Shur, M. S.

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2008-08-07

113

PREAI

Jain, R.; Sun, W.; Yang, J.; Shatalov, M.; Hu, X.; Sattu, A.; Lunev, A.; Deng, J.; Shturm, I.; Bilenko, Y.; Gaska, R.; Shur, M. S.

Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-07-18

PREAI

Pinos, A.; Marcinkevicius, S.; Liu, K.; Shur, M. S.; Yang, J.; Shatalov, M.; Gaska, R.

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

APPLIED PHYSICS LETTERS

IF3.6

2006-06-27

PREAI

Kuokstis, E.; Sun, W. H.; Shatalov, M.; Yang, J. W.; Khan, M. Asif

Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

APPLIED PHYSICS LETTERS

IF3.6

2006-03-21

PREAI

Gong, Z; Gaevski, M; Adivarahan, V; Sun, W; Shatalov, M; Khan, MA

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2005-05-10

PREAI

Shatalov, M; Chitnis, A; Yadav, P; Hasan, MF; Khan, J; Adivarahan, V; Maruska, HP; Sun, WH; Khan, MA

AlGaN-based 280 nm light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA

APPLIED PHYSICS LETTERS

IF3.6

2004-12-06

117

PREAI

Zhang, JP; Hu, X; Bilenko, Y; Deng, J; Lunev, A; Shur, MS; Gaska, R; Shatalov, M; Yang, JW; Khan, MA

250 nm AlGaN light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2004-09-20

204

PREAI

Adivarahan, V; Sun, WH; Chitnis, A; Shatalov, M; Wu, S; Maruska, HP; Khan, MA

研究方向