Michael L. Alles - Publications, H-index & Citations

Michael L. Alles

vanderbilt university

38H指数

261论文数

5.2K被引数

收录论文 12

发表时间

Back-Biasing Strategy to Mitigate TID-Induced Threshold Voltage Shift in 22-nm FDSOI Transistors 22-nm FDSOI晶体管中缓解总剂量效应引起的阈值电压漂移的背偏策略

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Dean, Berkay R.; Hu, Michael D.; Haeffner, Tim D.; Kauppila, Jeff S.; Alles, Michael L.; Trippe, James M.; Ball, Dennis R.; Sierawski, Brian D.; Holman, Timothy W.; Kosier, Steven L.; Massengill, Lloyd W.

Unifying Model for Estimating SELC/SEB in SiC Power Devices Using a Nonlinear Ion Track Resistance 基于非线性离子径迹电阻的SiC功率器件SELC/SEB估计统一模型

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Ball, Dennis R.; Kosier, Steven L.; Galloway, Kenneth F.; Witulski, Arthur F.; Sternberg, Andrew L.; Sengupta, Arijit; Islam, Sajal; Alles, Michael L.; Reed, Robert A.; Hutson, John M.; Osheroff, Jason M.; Schrimpf, Ronald D.

Proton-Induced Displacement Damage in AlGaInAs on InP Multi-Quantum-Well Continuous-Wave Laser Diodes 质子诱导的AlGaInAs在InP多量子阱连续波激光二极管中的位移损伤

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Bryant, Colin L.; Huang, Di; Arnold, Kellen P.; Dattilo, Hannah M.; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Zhang, En Xia; Harris, Phoenix M.; McCurdy, Michael W.; Trippe, James M.; Alles, Michael L.; Ball, Dennis R.; Weiss, Sharon M.; Delfyett, Peter J.; Reed, Robert A.

TID Degradation Mechanisms in Gate-All-Around Silicon Nanowire FETs 总剂量辐照退化机制在环绕栅极硅纳米线场效应晶体管中

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Champagne, Chloe A.; Ball, Dennis R.; Trippe, James M.; Ritzenthaler, Romain; Mitard, Jerome; Linten, Dimitri; Massengill, Lloyd W.; Kosier, Steven L.; Reed, Robert A.; Zhang, En Xia; Alles, Michael L.; Bonaldo, Stefano; Fleetwood, Daniel M.; Sierawski, Brian D.

Heavy Ion-Induced Degradation in Gallium Nitride High Electron Mobility Transistors 重离子诱导的氮化镓高电子迁移率晶体管退化

IEEE Transactions on Nuclear Science

IF1.9

2026-04-01

PREAI

Gray, Josh A.; Sternberg, Andrew L.; Kauppila, Jeffery S.; Ball, Dennis R.; Witulski, Arthur F.; Pilvelait, Bruce R.; Cameron, Charles B.; Trippe, James M.; Kosier, Steven L.; Alles, Michael L.; Davidson, Jim L.; Schrimpf, Ronald D.; Massengill, Lloyd W.

Dimensional dependence of the radiation damage in microelectromechanical system resonators

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-07-12

PREAI

Shuvra, Pranoy Deb; Arutt, Charles N.; Lin, Ji-Tzuoh; Davidson, Jim; Alles, Michael; Walsh, Kevin; Alphenaar, Bruce; McNamara, Shamus

Low-frequency noise and defects in copper and ruthenium resistors

APPLIED PHYSICS LETTERS

IF3.6

2019-05-20

OAAI

Fleetwood, D. M.; Beyne, S.; Jiang, R.; Zhao, S. E.; Wang, P.; Bonaldo, S.; McCurdy, M. W.; Tokei, Zs.; DeWolf, I.; Croes, Kristof; Zhang, E. X.; Alles, M. L.; Schrimpf, R. D.; Reed, R. A.; Linten, D.

Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms

APPLIED PHYSICS LETTERS

IF3.6

2019-03-11

PREAI

Chen, Hailong; Jia, Hao; Liao, Wenjun; Pashaei, Vida; Arutt, Charles N.; McCurdy, Michael W.; Zorman, Christian A.; Reed, Robert A.; Schrimpf, Ronald D.; Alles, Michael L.; Feng, Philip X. -L.

Near-Surface Electronic Contribution to Semiconductor Elasticity

PHYSICAL REVIEW APPLIED

IF4.4

2017-09-18

OAAI

Lin, J. T.; Shuvra, P. D.; McNamara, S.; Gong, H.; Liao, W.; Davidson, J. L.; Walsh, K. M.; Alles, M. L.; Alphenaar, B. W.

Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments

IEEE SENSORS JOURNAL

IF4.5

2017-02-15

PREAI

Pitt, E. Bryn; Barth, Eric J.; Diggins, Zachary J.; Mahadevan, Nagabhushan; Karsai, Gabor; Sierawski, Brian D.; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.; Alles, Michael L.; Witulski, Arthur F.

Range-Finding Sensor Degradation in Gamma Radiation Environments

IEEE SENSORS JOURNAL

IF4.5

2014-01-01

PREAI

Diggins, Zachary J.; Mahadevan, Nagabhushan; Herbison, Dan; Karsai, Gabor; Barth, Eric; Reed, Robert A.; Schrimpf, Ron D.; Weller, Robert A.; Alles, Michael L.; Witulski, Arthur

Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-09-17

PREAI

Zhang, E. X.; Newaz, A. K. M.; Wang, B.; Zhang, C. X.; Fleetwood, D. M.; Bolotin, K. I.; Schrimpf, R. D.; Pantelides, S. T.; Alles, M. L.

研究方向