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S

S. P. Murarka

机构信息待补充

51H指数
306论文数
1.1W被引数
收录论文 14
发表时间
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Substrate effects on hardness and polishing of SiO2 thin films
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err8
errOAAI
errKallingal, CG; Tomozawa, M; Murarka, SP
err分享
err收藏
Two-dimensional wafer-scale chemical mechanical planarization models based on lubrication theory and mass transport
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err173
PREAI
errSundararajan, S; Thakurta, DG; Schwendeman, DW; Murarka, SP; Gill, WN
err分享
err收藏
Stability of Cu on epoxy siloxane polymer under bias temperature stress
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err1
PREAI
errWang, PI; Juneja, JS; Murarka, SP; Lu, TM; Jezewski, C; Ghoshal, R; Ghoshal, R; Bakhru, H
err分享
err收藏
Mobile ion detection in organosiloxane polymer using triangular voltage sweep
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2002-01-01
err28
PREAI
errMallikarjunan, A; Murarka, SP; Lu, TM
err分享
err收藏
Metal drift behavior in low dielectric constant organosiloxane polymer
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-09-17
err69
PREAI
errMallikarjunan, A; Murarka, SP; Lu, TM
err分享
err收藏
Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-04-23
err120
PREAI
errKrishnamoorthy, A; Chanda, K; Murarka, SP; Ramanath, G; Ryan, JG
err分享
err收藏
Evolution of the Cu-Al alloy/SiO2 interfaces during bias temperature stressing
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2001-01-01
err10
PREAI
errWang, PI; Murarka, SP; Yang, GR; Lu, TM
err分享
err收藏
Surface segregation of Al of the bilayers of pure Cu and Cu-Al alloy films
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2001-01-01
err14
PREAI
errWang, PI; Murarka, SP; Kaminski, DA; Bedell, S; Lanford, WA
err分享
err收藏
Investigation of aluminum-indium alloys for interconnect applications
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2000-01-01
err2
PREAI
errKailasam, SK; Murarka, SP; Glicksman, ME
err分享
err收藏
Electrical behavior of Cu thin fluorinated PECVD oxide MIS capacitors
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2000-01-01
err4
PREAI
errMallikarjunan, A; Murarka, SP; Steinbruchel, C; Kumar, A; Bakhru, H
err分享
err收藏
Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2000-01-01
err11
PREAI
errCui, H; Bhat, IB; Murarka, SP; Lu, HQ; Li, WD; Hsia, WJ; Catabay, W
err分享
err收藏
Low-temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-03-25
err4
PREAI
errMello, KE; Soss, SR; Murarka, SP; Lu, TM; Lee, SL
err分享
err收藏
Completely passivated high conductivity copper films made by annealing Cu/Al bilayers
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-03-18
err12
PREAI
errWang, W; Lanford, WA; Murarka, SP
err分享
err收藏
Epitaxial quality of thin Ag films on GaAs(100) surfaces cleaned with various wet etching techniques
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-01-29
err9
PREAI
errMello, KE; Soss, SR; Murarka, SP; Lu, TM; Lee, SL
err分享
err收藏

研究方向

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合作学者
合作期刊
王薇 封面图
王薇 (Wei Wang)
H 指数: 76 · 论文数: 602
崔昊 封面图
崔昊 (Hao Cui)
H 指数: 57 · 论文数: 602
M
M. E. Glicksman
H 指数: 49 · 论文数: 426
W
W. A. Lanford
H 指数: 45 · 论文数: 278
M
M. Tomozawa
H 指数: 43 · 论文数: 299
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