J. Washburn - Publications, H-index & Citations

J. Washburn

机构信息待补充

47H指数

435论文数

7.9K被引数

收录论文 14

发表时间

Crystal structure of κ-In2Se3

APPLIED PHYSICS LETTERS

IF3.6

2002-12-02

OAAI

Jasinski, J; Swider, W; Washburn, J; Liliental-Weber, Z; Chaiken, A; Nauka, K; Gibson, GA; Yang, CC

Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation

APPLIED PHYSICS LETTERS

IF3.6

2001-08-13

OAAI

Jasinski, J; Yu, KM; Walukiewicz, W; Washburn, J; Liliental-Weber, Z

Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN

APPLIED PHYSICS LETTERS

IF3.6

2001-06-11

OAAI

Lim, SH; Washburn, J; Liliental-Weber, Z; Qiao, D

Reduction of threading dislocation density in GaN using an intermediate temperature interlayer

APPLIED PHYSICS LETTERS

IF3.6

2000-11-27

PREAI

Bourret-Courchesne, ED; Kellermann, S; Yu, KM; Benamara, M; Liliental-Weber, Z; Washburn, J; Irvine, SJC; Stafford, A

Mg-doped GaN:: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

1999-12-27

PREAI

Liliental-Weber, Z; Benamara, M; Swider, W; Washburn, J; Grzegory, I; Porowski, S; Lambert, DJH; Eiting, CJ; Dupuis, RD

Microstructure of Ti/Al ohmic contacts for n-AlGaN

APPLIED PHYSICS LETTERS

IF3.6

1998-11-02

139

PREAI

Ruvimov, S; Liliental-Weber, Z; Washburn, J; Qiao, D; Lau, SS; Chu, PK

Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be

APPLIED PHYSICS LETTERS

IF3.6

1998-10-12

PREAI

Maltez, RL; Liliental-Weber, Z; Washburn, J; Behar, M; Klein, PB; Specht, P; Weber, ER

Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing

APPLIED PHYSICS LETTERS

IF3.6

1998-01-12

OAAI

Ruvimov, S; Dicker, C; Washburn, J; Liliental-Weber, Z

Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1997-11-17

PREAI

Ruvimov, S; LilientalWeber, Z; Washburn, J; Drummond, TJ; Hafich, M; Lee, SR

Microstructure of Ti/Al and Ti/Al/Ni/Au ohmic contacts for n-GaN

APPLIED PHYSICS LETTERS

IF3.6

1996-09-09

311

PREAI

Ruvimov, S; LilientalWeber, Z; Washburn, J; Duxstad, KJ; Haller, EE; Fan, ZF; Mohammad, SN; Kim, W; Botchkarev, AE; Morkoc, H

Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

APPLIED PHYSICS LETTERS

IF3.6

1996-08-12

161

PREAI

Ruvimov, S; LilientalWeber, Z; Suski, T; Ager, JW; Washburn, J; Krueger, J; Kisielowski, C; Weber, ER; Amano, H; Akasaki, I

Recrystallization of high energy As-implanted GaAs studied by transmission electron microscopy

APPLIED PHYSICS LETTERS

IF3.6

1996-03-11

PREAI

Jasinski, J; Chen, Y; Washburn, J; LilientalWeber, Z; Tan, HH; Jagadish, C; Kaminska, M

Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low-pressure organometallic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1996-01-15

PREAI

Ruvimov, S; Bourret, ED; Washburn, J; LilientalWeber, Z

Dislocation formation mechanism in strained InxGa1-xAs islands grown on GaAs(001) substrates

APPLIED PHYSICS LETTERS

IF3.6

1996-01-01

PREAI

Chen, Y; Lin, XW; LilientalWeber, Z; Washburn, J; Klem, JF; Tsao, JY

研究方向