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Kazutoshi Kojima

national institute of advanced industrial science & technology (aist)

31H指数
389论文数
4.3K被引数
收录论文 29
发表时间
Physical picture of nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC重Al掺杂p型4H-SiC中最近邻跳跃传导的物理图像
err2026-04-30
err0
PREAI
errMatsuura, Hideharu; Narita, Tomoya; Hidaka, Atsuki; Eto, Kazuma; Ji, Shiyang; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi
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A Fast p-n Junction SiC Detector for Heavy-Ion Applications一种用于重离子应用的快速p-n结SiC探测器
err2026-02-01
err0
PREAI
errKitamura, Noritaka; Kishishita, Tetsuichi; Kosugi, Ryoji; Michimasa, Shin'ichiro; Chillery, Thomas; Imai, Nobuaki; Kojima, Reiko; Li, Jiatai; Yokoyama, Rin; Tsuchiya, Ryo; Fujita, Yowichi; Kojima, Kazutoshi; Tanaka, Yasunori
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Hole capture cross section of the Al acceptor level in 4H-SiC
err2022-06-01
err5
PREAI
errKato, Masashi; Di, Jing; Ohkouchi, Yutaro; Mizuno, Taisuke; Ichimura, Masaya; Kojima, Kazutoshi
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Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices4H-SiC器件中硅空位中心激发态的测温量子传感器
err2021-01-25
err17
PREAI
errTuan Minh Hoang; Ishiwata, Hitoshi; Masuyama, Yuta; Yamazaki, Yuichi; Kojima, Kazutoshi; Lee, Sang-Yun; Ohshima, Takeshi; Iwasaki, Takayuki; Hisamoto, Digh; Hatano, Mutsuko
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Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations
err2021-01-12
err3
PREAI
errYamazaki, Yuichi; Chiba, Yoji; Sato, Shin-ichiro; Makino, Takahiro; Yamada, Naoto; Satoh, Takahiro; Kojima, Kazutoshi; Hijikata, Yasuto; Tsuchida, Hidekazu; Hoshino, Norihiro; Lee, Sang-Yun; Ohshima, Takeshi
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Influence of CMP damage induced during flattening SiC epitaxial layer on device performances
err2020-09-01
err13
PREAI
errMasumoto, Keiko; Senzaki, Junji; Hasegawa, Masaki; Ohira, Kentaro; Kojima, Kazutoshi; Kobayashi, Kenji; Okumura, Hajime
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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
err2014-10-17
err5
errOAAI
errMasumoto, Keiko; Asamizu, Hirokuni; Tamura, Kentaro; Kudou, Chiaki; Nishio, Johji; Kojima, Kazutoshi; Ohno, Toshiyuki; Okumura, Hajime
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E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
err2013-01-23
err12
errOAAI
errKoizumi, A.; Markevich, V. P.; Iwamoto, N.; Sasaki, S.; Ohshima, T.; Kojima, K.; Kimoto, T.; Uchida, K.; Nozaki, S.; Hamilton, B.; Peaker, A. R.
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Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
err2008-09-26
err24
PREAI
errNakashima, S.; Kitamura, T.; Kato, T.; Kojima, K.; Kosugi, R.; Okumura, H.; Tsuchida, H.; Ito, M.
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Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers
err2006-07-13
err75
PREAI
errSenzaki, Junji; Kojima, Kazutoshi; Kato, Tomohisa; Shimozato, Atsushi; Fukuda, Kenji
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Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer
err2006-01-11
err14
PREAI
errKojima, K; Kuroda, S; Okumura, H; Arai, K
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Impact ionization coefficients of 4H silicon carbide
err2004-08-23
err122
errOAAI
errHatakeyama, T; Watanabe, T; Shinohe, T; Kojima, K; Arai, K; Sano, N
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