Ville Vähänissi - Publications, H-index & Citations

Ville Vähänissi

Aalto University

19H指数

137论文数

1.3K被引数

收录论文 33

发表时间

Copper gettering in silicon by phosphorus and boron diffused layers and its impact on surface passivation 磷和硼扩散层在硅中铜 gettering 及其对表面钝化的影响

Materials Science in Semiconductor Processing

IF4.6

2026-09-21

OAAI

Farouk Badr; Zhongshu Yang; Marko Yli-Koski; Ville Vähänissi; Hele Savin; Daniel Macdonald; AnYao Liu

Challenges in Simultaneous Microstructuring and Hyperdoping of Germanium with Ultrafast Laser 利用超快激光对锗进行同步微纳结构和超掺杂的挑战

Physica Status Solidi A-Applications and Materials Science

IF1.9

2026-04-22

PREAI

Gnatyuk, Dmytro; Hamed, Sara; Ebrahimzadeh, Masoud; Liu, Hanchen; Vahanissi, Ville; Laukkanen, Pekka; Savin, Hele; Liu, Xiaolong

Bipolar and unipolar charge transfer during the formation of silicon/iodine solution interfaces 在硅/碘溶液界面形成过程中的双极性和单极性电荷转移

Surfaces and Interfaces

IF6.3

2025-12-31

PREAI

Shengyang Li; Mahdi Alizadeh; Ville Vähänissi; Hele Savin; Guangwei She; Wensheng Shi; Jani Oksanen

Transforming Schottky to Ohmic Contacts via Ultrahigh-Vacuum Engineered Interfacial Alloying

ACS Applied Materials and Interfaces

IF8.2

2025-12-01

PREAI

Ebrahimzadeh, Masoud; Piispanen, Perttu; Granroth, Sari; Miettinen, Mikko; Angervo, Ilari; Liu, Hanchen; Otsus, Markus; Punkkinen, Risto; Punkkinen, Marko; Vahanissi, Ville; Kokko, Kalevi; Paturi, Petriina; Kukli, Kaupo; Savin, Hele; Laukkanen, Pekka

Carrier mobility in crystalline germanium at high injection: experimental characterization of carrier-carrier scattering 高注入条件下晶体锗中的载流子迁移率：载流子-载流子散射的实验表征

Solar Energy Materials and Solar Cells

IF6.3

2025-10-17

OAAI

Moisés Garín; Mansur Gamel; Marko Yli-Koski; Ville Vähänissi; Gerard Rivera; Hele Savin; Isidro Martín

Charged thin film enables dopant free ohmic metal-semiconductor contact formation 带电薄膜能够实现无掺杂的欧姆金属-半导体接触形成

APPLIED SURFACE SCIENCE

IF6.9

2025-05-07

PREAI

Lahtiluoma, Lassi; Setala, Olli E.; Vahanissi, Ville; Savin, Hele

Impact of post-ion implantation annealing on Se-hyperdoped Ge

APPLIED PHYSICS LETTERS

IF3.6

2024-07-22

PREAI

Liu, Xiaolong; McKearney, Patrick; Schaefer, Soeren; Radfar, Behrad; Berencen, Yonder; Kentsch, Ulrich; Vahanissi, Ville; Zhou, Shengqiang; Kontermann, Stefan; Savin, Hele

Adsorption induced bipolar excitation at semiconductor surface 半导体表面的吸附诱导双极激发

SURFACES AND INTERFACES

IF6.3

2024-07-01

OAAI

Li, Shengyang; Chen, Kexun; Alizadeh, Mahdi; Vahaniss, Ville; Savin, Hele; Oksanen, Jani

Bridging the gap between surface physics and photonics

REPORTS ON PROGRESS IN PHYSICS

IF20.7

2024-03-06

OAAI

Laukkanen, Pekka; Punkkinen, Marko; Kuzmin, Mikhail; Kokko, Kalevi; Liu, Xiaolong; Radfar, Behrad; Vahanissi, Ville; Savin, Hele; Tukiainen, Antti; Hakkarainen, Teemu; Viheriala, Jukka; Guina, Mircea

Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

advanced photonics

IF3.9

2024-02-27

OAAI

Mc Kearney, Patrick; Schaefer, Soeren; Liu, Xiaolong; Paulus, Simon; Lebershausen, Ingo; Radfar, Behrad; Vahanissi, Ville; Savin, Hele; Kontermann, Stefan

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications-Effects of Precursor and Operating Conditions

MATERIALS

IF3.2

2023-08-08

OAAI

Matkivskyi, Vladyslav; Leiviska, Oskari; Wenner, Sigurd; Liu, Hanchen; Vahanissi, Ville; Savin, Hele; Di Sabatino, Marisa; Tranell, Gabriella

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

SMALL

IF12.1

2023-07-26

OAAI

Setala, Olli E. E.; Prest, Martin J. J.; Stefanov, Konstantin D. D.; Jordan, Douglas; Soman, Matthew R. R.; Vahanissi, Ville; Savin, Hele

Is carrier mobility a limiting factor for charge transfer in TiO2/Si devices? A study by transient reflectance spectroscopy

SURFACES AND INTERFACES

IF6.3

2023-06-01

OAAI

Khan, Ramsha; Pasanen, Hannu P.; Ali-Loytty, Harri; Ayedh, Hussein M.; Saari, Jesse; Vahanissi, Ville; Valden, Mika; Savin, Hele; Tkachenko, Nikolai V.

Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

ACS PHOTONICS

IF6.7

2023-05-22

OAAI

Seta''la'', Olli E.; Chen, Kexun; Pasanen, Toni P.; Liu, Xiaolong; Radfar, Behrad; Va''ha''nissi, Ville; Savin, Hele

Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

APPLIED PHYSICS LETTERS

IF3.6

2023-05-08

OAAI

Liu, Hanchen; Pasanen, Toni P.; Leiviska, Oskari; Isometsa, Joonas; Fung, Tsun Hang; Yli-Koski, Marko; Miettinen, Mikko; Laukkanen, Pekka; Vahanissi, Ville; Savin, Hele

Optoelectronic properties of black silicon fabricated by femtosecond laser in ambient air: exploring a large parameter space

OPTICS LETTERS

IF3.3

2023-02-23

PREAI

Radfar, Behrad; Chen, Kexun; Setala, Olli E.; Vahanissi, Ville; Savin, Hele; Liu, Xiaolong

Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-02-16

OAAI

Li, Shengyang; Ayedh, Hussein M.; Yli-Koski, Marko; Vahanissi, Ville; Savin, Hele; Oksanen, Jani

Effects of post oxidation of SiO2/Si interfaces in ultrahigh vacuum below 450?C

VACUUM

IF3.9

2022-08-01

OAAI

Rad, Zahra Jahanshah; Lehtio, Juha-Pekka; Chen, Kexun; Mack, Iris; Vahanissi, Ville; Miettinen, Mikko; Punkkinen, Marko; Punkkinen, Risto; Suomalainen, Petri; Hedman, Hannu-Pekka; Kuzmin, Mikhail; Kozlova, Jekaterina; Rahn, Mihkel; Tamm, Aile; Savin, Hele; Laukkanen, Pekka; Kokko, Kalevi

Tailoring Femtosecond-Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above-Bandgap Absorption

advanced photonics

IF3.9

2022-01-17

OAAI

Liu, Xiaolong; Radfar, Behrad; Chen, Kexun; Pasanen, Toni P.; Vahanissi, Ville; Savin, Hele

Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3

APL MATERIALS

IF4.5

2021-11-17

OAAI

Isometsa, Joonas; Fung, Tsun Hang; Pasanen, Toni P.; Liu, Hanchen; Yli-koski, Marko; Vahanissi, Ville; Savin, Hele

研究方向