A. V. Nenashev - Publications, H-index & Citations

A. V. Nenashev

russian academy of sciences

24H指数

131论文数

1.7K被引数

收录论文 38

发表时间

Parametrization of the charge-carrier mobility in organic disordered semiconductors

PHYSICAL REVIEW APPLIED

IF4.4

2024-07-09

PREAI

Baranovskii, S. D.; Nenashev, A. V.; Hertel, D.; Meerholz, K.; Gebhard, F.

Quantum states in disordered media. II. Spatial charge carrier distribution

PHYSICAL REVIEW B

IF3.7

2023-02-24

OAAI

Nenashev, A. V.; Baranovskii, S. D.; Meerholz, K.; Gebhard, F.

Quantum states in disordered media. I. Low-pass filter approach

PHYSICAL REVIEW B

IF3.7

2023-02-24

OAAI

Gebhard, F.; Nenashev, A., V; Meerholz, K.; Baranovskii, S. D.

Energy Scales of Compositional Disorder in Alloy Semiconductors

ACS OMEGA

IF4.3

2022-12-08

OAAI

Baranovskii, Sergei D.; Nenashev, Alexey, V; Hertel, Dirk; Gebhard, Florian; Meerholz, Klaus

Comment on Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites

ADVANCED FUNCTIONAL MATERIALS

IF19

2022-05-20

PREAI

Baranovskii, Sergei D.; Hoehbusch, Pauline; Nenashev, Alexey V.; Dvurechenskii, Anatolii V.; Gerhard, Marina; Hertel, Dirk; Meerholz, Klaus; Koch, Martin; Gebhard, Florian

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

NATURE COMMUNICATIONS

IF15.7

2021-05-05

OAAI

Senkovskiy, Boris, V; Nenashev, Alexey, V; Alavi, Seyed K.; Falke, Yannic; Hell, Martin; Bampoulis, Pantelis; Rybkovskiy, Dmitry, V; Usachov, Dmitry Yu; Fedorov, Alexander, V; Chernov, Alexander, I; Gebhard, Florian; Meerholz, Klaus; Hertel, Dirk; Arita, Masashi; Okuda, Taichi; Miyamoto, Koji; Shimada, Kenya; Fischer, Felix R.; Michely, Thomas; Baranovskii, Sergei D.; Lindfors, Klas; Szkopek, Thomas; Grueneis, Alexander

One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate

NANOMATERIALS

IF4.3

2021-04-02

OAAI

Novikov, Alexey, V; Smagina, Zhanna, V; Stepikhova, Margarita, V; Zinovyev, Vladimir A.; Rudin, Sergey A.; Dyakov, Sergey A.; Rodyakina, Ekaterina E.; Nenashev, Alexey, V; Sergeev, Sergey M.; Peretokin, Artem, V; Dvurechenskii, Anatoly, V

Comment on Charge transport in disordered semiconducting polymers driven by nuclear tunneling

PHYSICAL REVIEW B

IF3.7

2020-08-27

OAAI

Nenashev, A. V.; Gebhard, F.; Baranovskii, S. D.

Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

SCIENTIFIC REPORTS

IF3.9

2020-06-09

OAAI

Zinovieva, A. F.; Zinovyev, V. A.; Nenashev, A. V.; Teys, S. A.; Dvurechenskii, A. V.; Borodavchenko, O. M.; Zhivulko, V. D.; Mudryi, A. V.

Percolation description of charge transport in amorphous oxide semiconductors

PHYSICAL REVIEW B

IF3.7

2019-09-12

OAAI

Nenashev, A., V; Oelerich, J. O.; Greiner, S. H. M.; Dvurechenskii, A., V; Gebhard, F.; Baranovskii, S. D.

Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

PHYSICAL REVIEW B

IF3.7

2019-03-22

PREAI

Zinovieva, A. F.; Zinovyev, V. A.; Nenashev, A., V; Kulik, L., V; Dvurechenskii, A., V

Release of carriers from traps enhanced by hopping

PHYSICAL REVIEW B

IF3.7

2018-10-30

PREAI

Nenashev, A. V.; Valkovskii, V. V.; Oelerich, J. O.; Dvurechenskii, A. V.; Semeniuk, O.; Reznik, A.; Gebhard, F.; Baranovskii, S. D.

Field-enhanced mobility in the multiple-trapping regime

PHYSICAL REVIEW B

IF3.7

2018-07-03

PREAI

Nenashev, A. V.; Oelerich, J. O.; Jandieri, K.; Valkovskii, V. V.; Semeniuk, O.; Dvurechenskii, A. V.; Gebhard, F.; Juska, G.; Reznik, A.; Baranovskii, S. D.

Field dependence of hopping mobility: Lattice models against spatial disorder

PHYSICAL REVIEW B

IF3.7

2017-11-21

PREAI

Oelerich, J. O.; Nenashev, A. V.; Dvurechenskii, A. V.; Gebhard, F.; Baranovskii, S. D.

Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

PHYSICAL REVIEW B

IF3.7

2017-07-21

OAAI

Nenashev, A. V.; Oelerich, J. O.; Dvurechenskii, A. V.; Gebhard, F.; Baranovskii, S. D.