S. D. Baranovskiǐ - Publications, H-index & Citations

S. D. Baranovskiǐ

Philipps University Marburg

38H指数

233论文数

5.2K被引数

收录论文 74

发表时间

Variational encoder-decoder architecture for charge and energy transport in disordered materials

PHYSICAL REVIEW B

IF3.7

2025-01-21

PREAI

Mousavi, Fatemehsadat; Ansari-Rad, Mehdi; Baranovskii, Sergei D.

Parametrization of the charge-carrier mobility in organic disordered semiconductors

PHYSICAL REVIEW APPLIED

IF4.4

2024-07-09

PREAI

Baranovskii, S. D.; Nenashev, A. V.; Hertel, D.; Meerholz, K.; Gebhard, F.

Quantum states in disordered media. II. Spatial charge carrier distribution

PHYSICAL REVIEW B

IF3.7

2023-02-24

OAAI

Nenashev, A. V.; Baranovskii, S. D.; Meerholz, K.; Gebhard, F.

Quantum states in disordered media. I. Low-pass filter approach

PHYSICAL REVIEW B

IF3.7

2023-02-24

OAAI

Gebhard, F.; Nenashev, A., V; Meerholz, K.; Baranovskii, S. D.

Energy Scales of Compositional Disorder in Alloy Semiconductors

ACS OMEGA

IF4.3

2022-12-08

OAAI

Baranovskii, Sergei D.; Nenashev, Alexey, V; Hertel, Dirk; Gebhard, Florian; Meerholz, Klaus

Comment on Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites

ADVANCED FUNCTIONAL MATERIALS

IF19

2022-05-20

PREAI

Baranovskii, Sergei D.; Hoehbusch, Pauline; Nenashev, Alexey V.; Dvurechenskii, Anatolii V.; Gerhard, Marina; Hertel, Dirk; Meerholz, Klaus; Koch, Martin; Gebhard, Florian

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

NATURE COMMUNICATIONS

IF15.7

2021-05-05

OAAI

Senkovskiy, Boris, V; Nenashev, Alexey, V; Alavi, Seyed K.; Falke, Yannic; Hell, Martin; Bampoulis, Pantelis; Rybkovskiy, Dmitry, V; Usachov, Dmitry Yu; Fedorov, Alexander, V; Chernov, Alexander, I; Gebhard, Florian; Meerholz, Klaus; Hertel, Dirk; Arita, Masashi; Okuda, Taichi; Miyamoto, Koji; Shimada, Kenya; Fischer, Felix R.; Michely, Thomas; Baranovskii, Sergei D.; Lindfors, Klas; Szkopek, Thomas; Grueneis, Alexander

Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors

PHYSICAL REVIEW APPLIED

IF4.4

2021-02-09

PREAI

Lee, Yongjeong; Jung, Sungyeop; Plews, Andrew; Nejim, Ahmed; Simonetti, Olivier; Giraudet, Louis; Baranovskii, Sergei D.; Gebhard, Florian; Meerholz, Klaus; Jung, Sungjune; Horowitz, Gilles; Bonnassieux, Yvan

Comment on Charge transport in disordered semiconducting polymers driven by nuclear tunneling

PHYSICAL REVIEW B

IF3.7

2020-08-27

OAAI

Nenashev, A. V.; Gebhard, F.; Baranovskii, S. D.

Percolation description of charge transport in amorphous oxide semiconductors

PHYSICAL REVIEW B

IF3.7

2019-09-12

OAAI

Nenashev, A., V; Oelerich, J. O.; Greiner, S. H. M.; Dvurechenskii, A., V; Gebhard, F.; Baranovskii, S. D.

Release of carriers from traps enhanced by hopping

PHYSICAL REVIEW B

IF3.7

2018-10-30

PREAI

Nenashev, A. V.; Valkovskii, V. V.; Oelerich, J. O.; Dvurechenskii, A. V.; Semeniuk, O.; Reznik, A.; Gebhard, F.; Baranovskii, S. D.

Field-enhanced mobility in the multiple-trapping regime

PHYSICAL REVIEW B

IF3.7

2018-07-03

PREAI

Nenashev, A. V.; Oelerich, J. O.; Jandieri, K.; Valkovskii, V. V.; Semeniuk, O.; Dvurechenskii, A. V.; Gebhard, F.; Juska, G.; Reznik, A.; Baranovskii, S. D.

Field dependence of hopping mobility: Lattice models against spatial disorder

PHYSICAL REVIEW B

IF3.7

2017-11-21

PREAI

Oelerich, J. O.; Nenashev, A. V.; Dvurechenskii, A. V.; Gebhard, F.; Baranovskii, S. D.

Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

PHYSICAL REVIEW B

IF3.7

2017-07-21

OAAI

Nenashev, A. V.; Oelerich, J. O.; Dvurechenskii, A. V.; Gebhard, F.; Baranovskii, S. D.

Analytical theory for charge carrier recombination in blend organic solar cells

PHYSICAL REVIEW B

IF3.7

2017-03-28

PREAI

Nenashev, A. V.; Wiemer, M.; Dvurechenskii, A. V.; Kulik, L. V.; Pevtsov, A. B.; Gebhard, F.; Koch, M.; Baranovskii, S. D.

Transport of electrons in lead oxide studied by CELIV technique

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-12-12

PREAI

Semeniuk, O.; Juska, G.; Oelerich, J. O.; Jandieri, K.; Baranovskii, S. D.; Reznik, A.

Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: experiment and Monte-Carlo simulation

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-12-01

PREAI

Valkovskii, V. V.; Shakfa, M. K.; Jandieri, K.; Ludewig, P.; Volz, K.; Stolz, W.; Koch, M.; Baranovskii, S. D.

Charge transport mechanism in lead oxide revealed by CELIV technique

SCIENTIFIC REPORTS

IF3.9

2016-09-15

OAAI

Semeniuk, O.; Juska, G.; Oelerich, J. -O.; Wiemer, M.; Baranovskii, S. D.; Reznik, A.

Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: A topological consideration

APPLIED PHYSICS LETTERS

IF3.6

2016-07-18

PREAI

Nenashev, A. V.; Wiemer, M.; Dvurechenskii, A. V.; Gebhard, F.; Koch, M.; Baranovskii, S. D.

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon

CHEMISTRY OF MATERIALS

IF7

2016-05-09

PREAI

Beyer, Andreas; Stegmueller, Andreas; Oelerich, Jan O.; Jandieri, Kakhaber; Werner, Katharina; Mette, Gerson; Stolz, Wolfgang; Baranovskii, Sergei D.; Tonner, Ralf; Volz, Kerstin

研究方向